Datasheet

8 7 6 5 4 3 2 1
17 18 19 20 21 22 23 24
32
31
30
29
28
27
26
25
9
10
11
12
13
14
15
16
DAP
(GND)
OUT0+
OUT0-
OUT1+
OUT1-
OUT2+
OUT2-
OUT3+
OUT3-
IN0+
IN0-
IN1+
IN1-
IN2+
IN2-
IN3+
IN3-
EN
V
DD
V
DD
GND
V
DD
V
DD
GND
GND
GND
GND
V
DD
V
DD
V
DD
V
DD
N
/
C
N
/
C
DS90LV804
SNLS195L –SEPTEMBER 2005–REVISED APRIL 2013 www.ti.com
DS90LV804 WQFN Pinout
(Top View)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
DD
) −0.3V to +4.0V
CMOS Input Voltage (EN) −0.3V to (V
DD
+0.3V)
LVDS Input Voltage
(2)
−0.3V to (V
DD
+0.3V)
LVDS Output Voltage −0.3V to (V
DD
+0.3V)
LVDS Output Short Circuit Current +90 mA
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Solder, 4sec) 260°C
Max Pkg Power Capacity @ 25°C 4.16W
θ
JA
29.5°C/W
Thermal Resistance
θ
JC
3.5°C/W
Package Derating above +25°C 33.3mW/°C
HBM, 1.5kΩ, 100pF 12 kV
ESD Last Passing Voltage (LVDS output pins) EIAJ, 0Ω, 200pF 250V
Charged Device Model 1000V
HBM, 1.5kΩ, 100pF 8 kV
ESD Last Passing Voltage (All other pins) EIAJ, 0Ω, 200pF 250V
Charged Device Model 1000V
(1) Absolute maximum ratings are those values beyond which damage to the device may occur. The databook specifications should be met,
without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. TI
does not recommend operation of products outside of recommended operation conditions.
(2) V
ID
max < 2.4V
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