Datasheet

R1
R2
D1
D2
R
IN1-
R
IN1+
R
IN2+
R
IN2-
D
OUT2-
D
OUT2+
D
OUT1+
D
OUT1-
R
OUT1
R
OUT2
D
IN2
D
IN1
AND
EN
EN
NRND
DS90LV049H
SNLS200A SEPTEMBER 2005REVISED APRIL 2013
www.ti.com
FUNCTIONAL DIAGRAM
Table 1. TRUTH TABLE
EN EN LVDS Out LVCMOS Out
L or Open L or Open OFF OFF
H L or Open ON ON
L or Open H OFF OFF
H H OFF OFF
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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