Datasheet

DS90LV028A
SNLS013E –JUNE 1998–REVISED APRIL 2013 www.ti.com
Functional Diagram
Truth Table
INPUTS OUTPUT
[R
IN
+] − [R
IN
−] R
OUT
V
ID
≥ 0.1V H
V
ID
≤ −0.1V L
Full Fail-safe OPEN/SHORT or Terminated H
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
CC
) −0.3V to +4V
Input Voltage (R
IN
+, R
IN
−) −0.3V to +3.9V
Output Voltage (R
OUT
) −0.3V to V
CC
+ 0.3V
Maximum Package Power Dissipation @ +25°C
D Package 1025 mW
Derate D Package 8.2 mW/°C above +25°C
NGN Package 3.3W
Derate NGN Package 25.6 mW/°C above +25°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range Soldering
(4 sec.) +260°C
Maximum Junction Temperature +150°C
ESD Rating
(2)
(HBM 1.5 kΩ, 100 pF) ≥ 7 kV
(EIAJ 0Ω, 200 pF) ≥ 500 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.
(2) ESD Rating:
HBM (1.5 kΩ, 100 pF) ≥ 7 kV
EIAJ (0Ω, 200 pF) ≥ 500V
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) +3.0 +3.3 +3.6 V
Receiver Input Voltage GND 3.0 V
Operating Free Air
Temperature (T
A
) −40 25 +85 °C
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