Datasheet

DC Electrical Characteristics
T
A
= −40˚C to +85˚C unless otherwise noted, V
CC
= 5.0
±
0.5V. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage R
L
= 100Ω ( Figure 1 ) DO+,
DO−
250 360 450 mV
∆V
OD
V
OD
Magnitude Change 660mV
V
OS
Offset Voltage 1 1.25 1.8 V
∆V
OS
Offset Magnitude Change 5 60 mV
I
OZD
TRI-STATE Leakage V
OUT
=V
CC
or GND, DE = 0V −10
±
1 +10 µA
I
OXD
Power-Off Leakage V
OUT
= 5.5V or GND, V
CC
= 0V −10
±
1 +10 µA
I
OSD
Output Short Circuit Current V
OUT
= 0V, DE = V
CC
−10 −6 −4 mA
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
OH
Voltage High VID = +100 mV I
OH
= −400 µA R
OUT
4.3 5.0 V
Inputs Open 4.3 5.0 V
V
OL
Voltage Output Low I
OL
= 2.0 mA, VID = −100 mV 0.1 0.4 V
I
OS
Output Short Circuit Current V
OUT
= 0V −150 −75 −40 mA
V
TH
Input Threshold High RI+,
RI−
+100 mV
V
TH
Input Threshold Low −100 mV
I
IN
Input Current V
IN
= +2.4V or 0V, V
CC
= 5.5V or
0V
−15
±
1 +15 µA
DEVICE CHARACTERISTICS
V
IH
Minimum Input High Voltage D
IN
,
DE ,RE
2.0 V
CC
V
V
IL
Maximum Input Low Voltage GND 0.8 V
I
IH
Input High Current V
IN
=V
CC
or 2.4 V
±
1
±
10 µA
I
IL
Input Low Current V
IN
= GND or 0.4V
±
1
±
10 µA
V
CL
Input Diode Clamp Voltage I
CLAMP
= −18 mA −1.5 −0.8 V
I
CCD
Power Supply Current DE = RE = V
CC
V
CC
12 19 mA
I
CCR
DE=RE=0V 5.8 8 mA
I
CCZ
DE = 0V, RE = V
CC
4.5 8.5 mA
I
CC
DE=V
CC
,RE=0V 18 48 mA
C
D output
Capacitance DO+,
DO−
5pF
C
R input
Capacitance RI+,
RI−
5pF
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified.
Note 3: All typicals are given for V
CC
= +3.3V or +5.0V and T
A
= +25˚C, unless otherwise stated.
Note 4: ESD Rating:
HBM (1.5 kΩ, 100 pF)
>
2.0 kV
EIAJ (0Ω, 200 pF)
>
200V.
Note 5: C
L
includes probe and fixture capacitance.
Note 6: Generator waveforms for all tests unless otherwise specified;f=1MHz, Z
O
=50Ω,t
r
=t
f
≤6.0 ns (0%–100%).
AC Electrical Characteristics
T
A
= −40˚C to +85˚C, V
CC
= 3.3V
±
0.3V. (Note 6)
Symbol Parameter Conditions Min Typ Max Units
DRIVER TIMING REQUIREMENTS
t
PHLD
Differential Propagation Delay High to Low R
L
= 100Ω,
C
L
=10pF
(
Figure 2 and Figure 3 )
2.0 4.0 6.5 ns
t
PLHD
Differential Propagation Delay Low to High 1.0 5.6 7.0 ns
t
SKD
Differential Skew |t
PHLD
−t
PLHD
| 0.4 1.0 ns
t
TLH
Transition Time Low to High 0.2 0.7 3.0 ns
t
THL
Transition Time High to Low 0.2 0.8 3.0 ns
DS90LV019
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