Datasheet

DS90CR483A, DS90CR484A
www.ti.com
SNLS291A APRIL 2008REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) 0.3V to +4V
CMOS/TTL Input Voltage 0.3V to +5.5V
LVCMOS/TTL Output Voltage 0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage 0.3V to +3.6V
LVDS Driver Output Voltage 0.3V to +3.6V
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150°C
Storage Temperature 65°C to +150°C
Lead Temperature (Soldering, 4 sec.) 100L TQFP +260°C
DS90CR483ANEZ 2.3W
Maximum Package Power Dissipation Capacity @ 25°C 100
TQFP Package
DS90CR484ANEZ 2.3W
DS90CR483ANEZ 18.1mW/°C above +25°C
Package Derating
DS90CR484ANEZ 18.1mW/°C above +25°C
(HBM, 1.5k, 100pF) > 6 kV
DS90CR483A
(EIAJ, 0, 200pF) > 300 V
ESD Rating
(HBM, 1.5k, 100pF) > 2 kV
DS90CR484A
(EIAJ, 0, 200pF) > 200 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the device should be operated at these limits. “Electrical Characteristics” specify conditions for device operation.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
Min Nom Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air Temperature (T
A)
10 +25 +70 °C
Receiver Input Range 0 2.4 V
Supply Noise Voltage 100 mV
p-p
Input Clock (TX) 33 112 MHz
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