Datasheet

DS90CR285, DS90CR286
www.ti.com SNLS130C –MARCH 1999–REVISED MARCH 2013
Typical Application
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) −0.3V to +4V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3V)
CMOS/TTL Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 4 sec.) +260°C
Solder Reflow Temperature Maximum Package Power DS90CR285MTD 1.63 W
Dissipation @ +25°C
DS90CR286MTD 1.61 W
Package Derating: DS90CR285MTD 12.5 mW/°C above +25°C
DS90CR286MTD 12.4 mW/°C above +25°C
ESD Rating (HBM, 1.5 kΩ, 100 pF) > 7 kV
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to
imply that the device should be operated at these limits. “Electrical Characteristics” specify conditions for device operation.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Recommended Operating Conditions
Min Nom Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air Temperature (T
A
) −40 +25 +85 °C
Receiver Input Range 0 2.4 V
Supply Noise Voltage (V
CC
) 100 mV
PP
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