Datasheet

DS90CP22
SNLS053E –MARCH 2000–REVISED APRIL 2013 www.ti.com
Figure 2. Diff. Output Eye-Pattern in 1:2 split mode @ 800 Mbps
Conditions: 3.3 V, PRBS = 2
23
−1 data pattern,
V
ID
= 300mV, V
CM
= +1.2 V, 200 ps/div, 100 mV/div
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) −0.3V to +4V
CMOS/TTL Input Voltage (EN0, EN1, SEL0, SEL1) −0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage (IN+, IN−) −0.3V to +4V
LVDS Driver Output Voltage (OUT+, OUT−) −0.3V to +4V
LVDS Output Short Circuit Current Continuous
Junction Temperature +150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 4 sec.) +260°C
Maximum Package Power Dissipation at 16L SOIC 1.435 W
25°C
16L SOIC Package Derating 11.48 mW/°C above +25°C
16L TSSOP 0.866 W
16L TSSOP Package Derating 9.6 mW/°C above +25°C
ESD Rating (HBM, 1.5kΩ, 100pF) > 5 kV
(EIAJ, 0Ω, 200pF) > 250 V
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(2) “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be verified. They are not meant to imply that the
device should be operated at these limits. “Electrical Characteristics” provides conditions for actual device operation.
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Receiver Input Voltage 0 V
CC
V
Operating Free Air Temperature -40 +25 +85 °C
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