Datasheet

DS90CF383B
SNLS178E –JULY 2004–REVISED APRIL 2013 www.ti.com
Block Diagram
DS90CF383B
See Package Number DGG0056A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(1)
Value Unit
Supply Voltage (V
CC
) −0.3V to +4 V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3) V
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3) V
LVDS Output Short Circuit
Duration Continuous
Junction Temperature +150 °C
Storage Temperature −65°C to +150 °C
Lead Temperature
(Soldering, 4 sec) +260 °C
Maximum Package Power Dissipation Capacity @ 25°C DGG0056A (TSSOP) Package:
DS90CF383B 1.63 W
Package Derating: 12.5 mW/°C above
DS90CF383B +25°C
ESD Rating (HBM, 1.5 kΩ, 100 pF) 7 kV
ESD Rating (EIAJ, 0Ω, 200 pF) 500 V
(1) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(2) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be verified. They are not meant to imply
that the device should be operated at these limits. The “Electrical Characteristics” specify conditions for device operation.
Recommended Operating Conditions
Min Nom Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air Temperature (T
A
) −10 +25 +70 °C
Supply Noise Voltage (V
CC
) 200 mV
PP
TxCLKIN frequency 18 68 MHz
Electrical Characteristics
(1)
Over recommended operating supply and temperature ranges unless otherwise specified.
(1) Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground
unless otherwise specified (except V
OD
and ΔV
OD
).
2 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: DS90CF383B