Datasheet

DS90C363, DS90CF364
SNLS123C –SEPTEMBER 1999–REVISED APRIL 2013 www.ti.com
Figure 2. DS90C363 Figure 3. DS90CF364
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
CC
) −0.3V to +4V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3V)
CMOS/TTL Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Receiver Input Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 4 seconds) +260°C
DS90C363 1.98 W
Maximum Package Power Dissipation Capacity at 25°C (TSSOP
Package)
DS90CF364 1.89 W
DS90C363 16 mW/°C above +25°C
Package Derating
DS90CF364 15 mW/°C above +25°C
ESD Rating HBM, 1.5 kΩ, 100 pF > 7 kV
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to
imply that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Recommended Operating Conditions
Min Nom Max Unit
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air Temperature (T
A
) −40 +25 +85 °C
Receiver Input Range 0 2.4 V
Supply Noise Voltage (V
CC
) 100 mV
PP
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