Datasheet

DS90C363B
SNLS179F –APRIL 2004–REVISED APRIL 2013 www.ti.com
Block Diagram
Figure 1. DS90C363B
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
CC
) −0.3V to +4 V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3) V
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3) V
LVDS Output Short Circuit Duration Continuous
Junction Temperature +150 °C
Storage Temperature −65°C to +150 °C
Lead Temperature (Soldering, 4 sec) +260 °C
Maximum Package Power Dissipation Capacity at 25°C TSSOP Package 1.98 W
Package Power Dissipation Derating 16 mW/°C above +25°C
HBM, 1.5 kΩ, 100 pF 7 kV
ESD Rating
EIAJ, 0Ω, 200 pF 500 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be verified. They are not meant to imply
that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Recommended Operating Conditions
Min Nom Max Unit
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air Temperature (T
A
) −10 +25 +70 °C
Supply Noise Voltage (V
CC
) 200 mV
PP
TxCLKIN frequency 18 68 MHz
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