Datasheet

DS90C3202
SNLS191D –APRIL 2005–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
DD
) −0.3V to +4V
LVCMOS/LVTTL Input Voltage −0.3V to (V
DD
+ 0.3V)
LVCMOS/LVTTL Output Voltage −0.3V to (V
DD
+ 0.3V)
LVDS Receiver Input Voltage −0.3V to (V
DD
+ 0.3V)
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Soldering, 10 seconds) +260°C
Maximum Package Power Dissipation Capacity at 25°C 128 TQFP Package 1.4W
Package Derating 25.6mW/°C above +25°C
ESD Rating: HBM, 1.5kΩ, 100pF > 2 kV
EIAJ, 0Ω, 200pF > 200 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Recommended Operating Conditions
Min Nom Max Unit
Supply Voltage (V
DD
) 3.15 3.3 3.6 V
Operating Free Air Temperature (T
A
) 0 +25 +70 °C
Supply Noise Voltage (V
P-P
) ±100 mV
p-p
Receiver Input Range 0 V
DD
V
Input Clock Frequency (f) 8 135 MHz
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