Datasheet

DS89C21
SNLS091C –JUNE 1998–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(3)
Supply Voltage (V
CC
) 7V
Driver Input Voltage (DI) −1.5V to V
CC
+ 1.5V
Driver Output Voltage (DO, DO
*
) −0.5V to +7V
Receiver Input Voltage—V
CM
(RI, RI
*
) ±14V
Differential Receiver Input ±14V
Voltage—V
DIFF
(RI, RI
*
)
Receiver Output Voltage (RO) −0.5V to V
CC
+0.5V
Receiver Output Current (RO) ±25 mA
Storage Temperature Range
(T
STG
) −65°C to +150°C
Lead Temperature (T
L
) +260°C
(Soldering 4 sec.)
Maximum Junction Temperature 150°C
Maximum Package Power Dissipation @+25°C
D Package 714 mW
Derate D Package 5.7 mW/°C above +25°C
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the devices should be operated at these limits. The tables of Electrical Characteristics specify conditions for device operation.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) ESD Rating: HBM (1.5 kΩ, 100 pF) all pins ≥ 2000V.EIAJ (0Ω, 200 pF) ≥ 250V
Recommended Operating Conditions
Min Max Units
Supply Voltage (V
CC
) 4.50 5.50 V
Operating Temperature (T
A
) −40 +85 °C
Input Rise or Fall Time (DI) 500 ns
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