Datasheet

DS485
SNLS122C –JULY 1998–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Supply Voltage (V
CC
) +12V
Enable Input Voltage (RE*, DE) −0.5V to (V
CC
+ 0.5V)
Driver Input Voltage (DI) −0.5V to (V
CC
+ 0.5V)
Driver Output Voltage (A, B) −14V to +14V
Receiver Input Voltage (A, B) −14V to +14V
Receiver Output Voltage (RO) −0.5V to (V
CC
+ 0.5V)
Maximum Package Power Dissipation @ +25°C SOIC Package 1.19W
PDIP Package 0.74W
Derate SOIC Package 9.5 mW/°C above +25°C
Derate PDIP Package 6.0 mW/°C above +25°C
Maximum Package Power Dissipation @ +70°C SOIC Package 0.76W
PDIP Package 0.47W
Storage Temperature Range −65°C to +150°C
Lead Temperature Range Soldering, 4 sec +260°C
ESD (HBM) ≥2 kV
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(2) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the devices should be operated at these limits. The table of ELECTRICAL CHARACTERISTICS specifies conditions of device operation.
RECOMMENDED OPERATING CONDITIONS
Min Typ Max Units
Supply Voltage (V
CC
) +4.75 +5.0 +5.25 V
Operating Free Air Temperature (T
A
) DS485 0 +25 +70 °C
DS485T −40 +25 +85 °C
Bus Common Mode Voltage −7 +12 V
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