Datasheet

DS26C31M, DS26C31T
www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(3)
Supply Voltage (V
CC
) −0.5V to 7.0V
DC Input Voltage (V
IN
) −1.5V to V
CC
+1.5V
DC Output Voltage (V
OUT
) −0.5V to 7V
Clamp Diode Current (I
IK
, I
OK
) ±20 mA
DC Output Current, per pin (I
OUT
) ±150 mA
DC V
CC
or GND Current, per pin (I
CC
)
Storage Temperature Range (T
STG
) −65°C to +150°C
Max. Power Dissipation (P
D
) @25°C
(4)
Ceramic “NFE” Pkg. 2419 mW
Plastic “NFG” Pkg. 1736 mW
SOIC “D” Pkg. 1226 mW
Ceramic “NAD” Pkg. 1182 mW
Ceramic “NAJ” Pkg. 2134 mW
Lead Temperature (T
L
) (Soldering, 4 sec.) 260°C
This device does not meet 2000V ESD Rating.
(5)
(1) Unless otherwise specified, all voltages are referenced to ground. All currents into device pins are positive, all currents out of device
pins are negative.
(2) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be verified. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provide conditions for actual device operation.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) Ratings apply to ambient temperature at 25°C. Above this temperature derate NFG package at 13.89 mW/°C, NFE package 16.13
mW/°C, D package 9.80 mW/°C, NAJ package 12.20 mW/°C, and NAD package 6.75 mW/°C.
(5) ESD Rating: HBM (1.5 kΩ, 100 pF); Inputs ≥ 1500V; Outputs ≥ 1000V; EIAJ (0Ω, 200 pF) ≥ 350V
Operating Conditions
Min Max Units
Supply Voltage (V
CC
) 4.50 5.50 V
DC Input or Output Voltage (V
IN
, V
OUT
) 0 V
CC
V
Operating Temperature Range (T
A
) DS26C31T −40 +85 °C
DS26C31M −55 +125 °C
Input Rise or Fall Times (t
r
, t
f
) 500 ns
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