Datasheet

DRV8836
www.ti.com SLVSB17B –MARCH 2012–REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS
T
A
= 25°C, V
CC
= 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
I
VCC
VCC operating supply current f
PWM
= 50 kHz, no load 1.7 2.5 mA
nSLEEP = 0 V, all inputs 0 V 40 95
I
CCQ
VCC sleep mode supply current nA
V
CC
= 3 V, nSLEEP = 0 V, all inputs 0 V 10
V
CC
rising 2
VCC undervoltage lockout
V
UVLO
V
voltage
V
CC
falling 1.9
LOGIC-LEVEL INPUTS
V
IL
Input low voltage 0.25 x V
CC
V
V
IH
Input high voltage 0.5 x V
CC
V
I
IL
Input low current V
IN
= 0 -5 5 μA
I
IH
Input high current V
IN
= 3.3 V 50 μA
R
PD
Pulldown resistance 100 kΩ
H-BRIDGE FETS
V
CC
= 3 V, I
O
= 800 mA, T
J
= 25°C 370 420
R
DS(ON)
HS + LS FET on resistance mΩ
V
CC
= 5 V, I
O
= 800 mA, T
J
= 25°C 305 355
I
OFF
Off-state leakage current ±200 nA
PROTECTION CIRCUITS
I
OCP
Overcurrent protection trip level 1.6 3.5 A
t
DEG
Overcurrent deglitch time 1 µs
t
OCR
Overcurrent protection retry time 1 ms
t
DEAD
Output dead time 100 ns
t
TSD
Thermal shutdown temperature Die temperature 150 160 180 °C
Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: DRV8836