Datasheet

Over-
Temp
OUT1
OUT2
GND
IN1
VREF
VSET
VCC
VCC
VCC
Battery
DCM
Gate
Drive
Integ.
Comp
+
-
Logic
Ref
Osc
OCP
VCC
Gate
Drive
OCP
IN2
Current
Sense
FAULTn
ISENSE
DRV8832
SLVSAB3H –MAY 2010–REVISED OCTOBER 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DEVICE INFORMATION
Functional Block Diagram
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