Datasheet
DRV8805
www.ti.com
SLVSAW3C –JULY 2011–REVISED MARCH 2012
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
V
M
Power supply voltage range 8.2 60 V
V
CLAMP
Output clamp voltage range
(1)
0 60 V
Continuous output current, single channel on, T
A
= 25°C, SOIC package
(2)
1.5
Continuous output current, four channels on, T
A
= 25°C, SOIC package
(2)
0.8
I
OUT
A
Continuous output current, single channel on, T
A
= 25°C, HTSSOP package
(2)
1.5
Continuous output current, four channels on, T
A
= 25°C, HTSSOP package
(2)
0.8
(1) V
CLAMP
is used only to supply the clamp diodes. It is not a power supply input.
(2) Power dissipation and thermal limits must be observed.
ELECTRICAL CHARACTERISTICS
T
A
= 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
I
VM
VM operating supply current V
M
= 24 V 1.6 2.1 mA
VM undervoltage lockout
V
UVLO
V
M
rising 8.2 V
voltage
LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS)
V
IL
Input low voltage 0.6 0.7 V
V
IH
Input high voltage 2 V
V
HYS
Input hysteresis 0.45 V
I
IL
Input low current VIN = 0 –20 20 μA
I
IH
Input high current VIN = 3.3 V 100 μA
R
PD
Pulldown resistance 100 kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
V
OL
Output low voltage I
O
= 5 mA 0.5 V
I
OH
Output high leakage current V
O
= 3.3 V 1 μA
nHOME OUTPUT (OPEN-DRAIN OUTPUT WITH WEAK INTERNAL PULLUP)
V
OL
Output low voltage I
O
= 5 mA 0.5 V
V
OH
Output high voltage I
O
= 100 µA, V
M
= 24 V 3.3 V
I
OH
Output high leakage current V
O
= 3.3 V 1 µA
LOW-SIDE FETS
V
M
= 24 V, I
O
= 700 mA, T
J
= 25°C 0.5
R
DS(ON)
FET on resistance Ω
V
M
= 24 V, I
O
= 700 mA, T
J
= 85°C 0.75 0.8
I
OFF
Off-state leakage current –50 50 μA
HIGH-SIDE DIODES
V
F
Diode forward voltage V
M
= 24 V, I
O
= 700 mA, T
J
= 25°C 1.2 V
I
OFF
Off-state leakage current V
M
= 24 V, T
J
= 25°C –50 50 μA
OUTPUTS
t
R
Rise time V
M
= 24 V, I
O
= 700 mA, Resistive load 50 300 ns
t
F
Fall time V
M
= 24 V, I
O
= 700 mA, Resistive load 50 300 ns
PROTECTION CIRCUITS
I
OCP
Overcurrent protection trip level 2.3 3.8 A
Overcurrent protection deglitch
t
OCP
3.5 µs
time
Overcurrent protection retry
t
RETRY
1.2 ms
time
t
TSD
Thermal shutdown temperature Die temperature
(1)
150 160 180 °C
(1) Not production tested.
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