Datasheet
DRV8800
DRV8801
www.ti.com
SLVS855I –JULY 2008–REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
PWM
< 50 kHz 6
mA
IBB Motor supply current Charge pump on, Outputs disabled 3.2
Sleep mode 10 μA
V
IH
2
PHASE, ENABLE,
V
MODE input voltage
V
IL
0.8
V
IH
2.7
nSLEEP input voltage V
V
IL
0.8
I
IH
V
IN
= 2 V <1.0 20
PHASE, MODE input current μA
I
IL
V
IN
= 0.8 V –20 ≤–2.0 20
I
IH
V
IN
= 2 V 40 100
ENABLE input current μA
I
IL
V
IN
= 0.8 V 16 40
I
IH
V
IN
= 2.7 V 27 50
nSLEEP input current μA
I
IL
V
IN
= 0.8 V <1 10
V
OL
nFAULT output voltage I
sink
= 1 mA 0.4 V
VBBNFR VBB nFAULT release 8 V < VBB < 40 V 12 13.8 V
V
IHys
Input hysteresis, except nSLEEP 100 500 800 mV
Source driver, I
OUT
= –2.8 A, T
J
= 25°C 0.48
Source driver, I
OUT
= –2.8 A, T
J
= 125°C 0.74 0.85
r
DS(on)
Output ON resistance Ω
Sink driver, I
OUT
= 2.8 A, T
J
= 25°C 0.35
Sink driver, I
OUT
= 2.8 A, T
J
= 125°C 0.52 0.7
SENSE connected to ground through a 0.2-Ω
VTRP RSENSE voltage trip 500 mV
resistor
Source diode, I
f
= –2.8 A 1.4
V
f
Body diode forward voltage V
Sink diode, I
f
= 2.8 A 1.4
PWM, Change to source or sink ON 600
t
pd
Propagation delay time ns
PWM, Change to source or sink OFF 100
t
COD
Crossover delay 500 ns
DAGain Differential AMP gain Sense = 0.1 V to 0.4 V 5 V/V
Protection Circuitry
VUV UVLO threshold VBB increasing 6.5 7.5 V
I
OCP
Overcurrent threshold 3 A
t
DEG
Overcurrent deglitch time 3 µs
t
OCP
Overcurrent retry time 1.2 ms
TJW Thermal warning temperature Temperature increasing
(1)
160 °C
TJTSD Thermal shutdown temperature Temperature increasing
(2)
175 °C
(1) Once the device reaches the thermal warning temperature of 160°C, the device will remain in thermal warning until the device cools to
145°C. This is known as the device's thermal warning hysteresis.
(2) Once the device reaches the thermal shutdown temperature of 175°C, the device will remain in thermal shutdown until the device cools
to 160°C. This is known as the device's thermal shutdown hysteresis.
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