Datasheet

Charge
Pump
Thermal
Shutdown
GND2GND1
0.01 μF
VM VM
HS Gate
Drive
V
M
V
M
Internal
Reference
and
Regs
Int. VCC
Control
Logic
VM
VM
LS Gate
Drive
VM
OUT2
Predriver
+
10 μF
GND3
V3P3OUT
0.1 μF
Predriver
Predriver
OCP
VM
OCP
VM
OCP
B0480-01
EN1
IN2
IN3
EN3
FAULT
RESET
IN1
SLEEP
EN2
COMPN
COMPO
COMPP
OUT1
CP 1
CP 2
VCP
OUT3
Optional
Optional
Optional
PGND3
PGND2
PGND1
DRV8313
SLVSBA5A –OCTOBER 2012–REVISED NOVEMBER 2012 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
FUNCTIONAL BLOCK DIAGRAM
2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: DRV8313