Datasheet

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DP83849C
8.0 Electrical Specifications
Note: All parameters are guaranteed by test, statistical
analysis or design.
Absolute Maximum Ratings
Recommended Operating Conditions
Absolute maximum ratings are those values beyond which
the safety of the device cannot be guaranteed. They are
not meant to imply that the device should be operated at
these limits.
8.1 DC Specs
Supply Voltage (V
CC
) -0.5 V to 4.2 V
DC Input Voltage (V
IN
) -0.5V to V
CC
+ 0.5V
DC Output Voltage (V
OUT
) -0.5V to V
CC
+ 0.5V
Storage Temperature (T
STG
)
-65
o
C to 150°C
Lead Temp. (TL)
(Soldering, 10 sec.)
260 °C
ESD Rating
(R
ZAP
= 1.5k, C
ZAP
= 100 pF)
4.0 kV
Supply voltage (V
CC
) 3.3 Volts + .3V
Commercial - Ambient Temperature (T
A
)
0 to 70 °C
Power Dissipation (P
D
) 594 mW
Thermal Characteristic Max Units
Maximum Case Temperature @ 1.0 W
98 °C
Theta Junction to Case (T
jc
) @ 1.0 W
17.3 °C / W
Theta Junction to Ambient (T
ja
) degrees Celsius/Watt - No Airflow @ 1.0 W
53 °C / W
Symbol Pin Types Parameter Conditions Min Typ Max Units
V
IH
I
I/O
Input High Voltage Nominal V
CC
2.0 V
V
IL
I
I/O
Input Low Voltage 0.8 V
I
IH
I
I/O
Input High Current V
IN
= V
CC
10 µA
I
IL
I
I/O
Input Low Current V
IN
= GND 10 µA
V
OL
O,
I/O
Output Low
Voltage
I
OL
= 4 mA 0.4 V
V
OH
O,
I/O
Output High
Voltage
I
OH
= -4 mA Vcc - 0.5 V
I
OZ
I/O,
O
TRI-STATE
Leakage
V
OUT
= V
CC
+ 10 µA
V
TPTD_100
PMD Output
Pair
100M Transmit
Voltage
0.95 1 1.05 V
V
TPTDsym
PMD Output
Pair
100M Transmit
Voltage Symmetry
+ 2 %
V
TPTD_10
PMD Output
Pair
10M Transmit
Voltage
2.2 2.5 2.8 V
C
IN1
I CMOS Input
Capacitance
8 pF
C
OUT1
O CMOS Output
Capacitance
8 pF