Datasheet
DAC8728
SBAS466A –JUNE 2009–REVISED NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
RELATIVE DIFFERENTIAL SPECIFIED
ACCURACY LINEARITY PACKAGE- PACKAGE TEMPERATURE PACKAGE
PRODUCT (LSB) (LSB) LEAD DESIGNATOR RANGE MARKING
±4 ±1 QFN-56 RTQ –40°C to +105°C DAC8728
DAC8728
±4 ±1 TQFP-64 PAG –40°C to +105°C DAC8728
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
DAC8728 UNIT
AV
DD
to AV
SS
–0.3 to 38 V
AV
DD
to AGND –0.3 to 38 V
AV
SS
to AGND, DGND –19 to 0.3 V
DV
DD
to DGND –0.3 to 6 V
IOV
DD
to DGND –0.3 to DV
DD
+ 0.3 V
AGND to DGND –0.3 to 0.3 V
Digital input voltage to DGND –0.3 to IOV
DD
+ 0.3 V
V
OUT
-x, V
MON
to AV
SS
–0.3 to AV
DD
+ 0.3 V
REF-A, REF-B to AGND –0.3 to DV
DD
V
BUSY, GPIO to DGND –0.3 to IOV
DD
+ 0.3 V
Maximum current from V
MON
3 mA
Operating temperature range –40 to +105 °C
Storage temperature range –65 to +150 °C
Maximum junction temperature (T
J
max) +150 °C
Human body model (HBM) 4 kV
TQFP 1000 V
ESD ratings Charged device model (CDM)
QFN 500 V
Machine model (MM) 200 V
TQFP 55 °C/W
Junction-to-ambient, θ
JA
QFN 21.7 °C/W
Thermal impedance
TQFP 21 °C/W
Junction-to-case, θ
JC
QFN 20.4 °C/W
Power dissipation (T
J
max – T
A
) / θ
JA
W
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
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