Datasheet
DAC8234
www.ti.com
........................................................................................................................................... SBAS464A – AUGUST 2009 – REVISED SEPTEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
All specifications at T
A
= T
MIN
to T
MAX
, AV
DD
= +11V to +18V, AV
SS
= – 11V to – 18V, V
REF
= REF-A = REF-B = +5V,
DV
DD
= +5V, IOV
DD
= +1.8V to DV
DD
, AGND = DGND = REFGND-A = REFGND-B = SGND-x = 0V, and DAC gain = 4, unless
otherwise noted.
DAC8234
PARAMETER CONDITIONS MIN TYP MAX UNIT
DIGITAL INPUTS
(13)
(SDI, CS, SCLK, RST, UNI/BIP-A, UNI/BIP-B, LDAC, GPIO-x)
IOV
DD
= 4.5V to 5.5V 2.5 IOV
DD
+ 0.3 V
High-level input voltage, V
IH
IOV
DD
= 2.7V to 3.3V 2.1 IOV
DD
+ 0.3 V
IOV
DD
= +1.8V 1.6 IOV
DD
+ 0.3 V
IOV
DD
= 4.5V to 5.5V – 0.3 0.8 V
Low-level input voltage, V
IL
IOV
DD
= 2.7V to 3.3V – 0.3 0.6 V
IOV
DD
= +1.8V – 0.3 0.2 V
Input current 1 µ A
Input capacitance 5 pF
DIGITAL OUTPUTS
(13)
(SDO, GPIO-x)
IOV
DD
= 2.7V to 5.5V, sourcing 1mA IOV
DD
– 0.4 V
SDO high-level output voltage,
V
OH
IOV
DD
= +1.8V, sourcing 200 µ A 1.6 V
IOV
DD
= 2.7V to 5.5V, sinking 1mA 0.4 V
SDO low-level output voltage,
V
OL
IOV
DD
= +1.8V, sinking 200 µ A 0.2 V
SDO high-impedance leakage 1 µ A
SDO high-impedance output
10 pF
capacitance
IOV
DD
= 2.7V to 5.5V, sinking 1mA 0 0.4 V
GPIO low-level output voltage,
V
OL
IOV
DD
= +1.8V, sinking 1mA 0 0.4 V
GPIO open-drain high-level
GPIO in Hi-Z and configured as output 1 µ A
output leakage current
POWER SUPPLY
AV
DD
(14)
+4.75 +24 V
AV
SS
(15)
– 18 – 4.75 V
DV
DD
+2.7 +5.5 V
IOV
DD
+1.7 DV
DD
V
AI
DD
(normal operation) ± 10V output range, no loading current, V
OUT
= 0V 2.7 3.4 mA/Channel
AI
DD
(power-down) 100 µ A
AI
SS
(normal operation) ± 10V output range, no loading current, V
OUT
= 0V 3.3 4.0 mA/Channel
AI
SS
(power-down) 100 µ A
Static current through the DV
DD
pin with V
IH
= IOV
DD
and
DI
DD
25 50 µ A
V
IL
= DGND
IOI
DD
V
IH
= IOV
DD
, V
IL
= DGND ± 1 ± 10 µ A
Power dissipation (normal
± 12V power, no loading current, V
OUT
= 0V 290 mW
operation)
TEMPERATURE RANGE
Specified performance – 40 +105 ° C
(13) Specified by design and characterization.
(14) AV
DD
should not be greater than +24V or less than +4.75V. Also, AV
DD
should not be less than ( 2 × V
REF
+ 1V) for bipolar output mode
and should not be less than (Gain × V
REF
+ 1V) for unipolar output mode. In any case, (AV
DD
– AV
SS
) ≤ +36V.
(15) AV
SS
should not be greater than – 4.75V or less than – 18V. Also, AV
SS
should not be greater than ( – 2 × V
REF
– 1V). In any case, (AV
DD
– AV
SS
) ≤ +36V.
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