Datasheet

DAC8218
www.ti.com SBAS460A –MAY 2009–REVISED DECEMBER 2009
ELECTRICAL CHARACTERISTICS: Single-Supply (continued)
All specifications at T
A
= T
MIN
to T
MAX
, AV
DD
= +32V, AV
SS
= 0V, IOV
DD
= DV
DD
= +5V, REF-A and REF-B = +5V, gain = 6,
AGND-x = DGND = 0V, data format = straight binary, and OFFSET-A = OFFSET-B = AGND, unless otherwise noted.
DAC8218
PARAMETER CONDITIONS MIN TYP MAX UNIT
DIGITAL OUTPUT
(17)
IOV
DD
= +2.7V to +5.5V, sourcing 1mA IOV
DD
– 0.4 IOV
DD
V
High-level output voltage, V
OH
(SDO)
IOV
DD
= +1.8V, sourcing 200μA 1.6 IOV
DD
V
IOV
DD
= +2.7V to +5.5V, sinking 1mA 0 0.4 V
Low-level output voltage, V
OL
(SDO)
IOV
DD
= +1.8V, sinking 200μA 0 0.2 V
GPIO-n output voltage low, V
OL
1mA sink from IOV
DD
0.15 V
GPIO-n output voltage high, V
OH
10kΩ pull-up resistor to IOV
DD
0.99 × IOV
DD
V
High-impedance leakage current SDO and GPIO-n ±5 μA
SDO 5 pF
High-impedance output
capacitance
GPIO-n 14 pF
POWER SUPPLY
AV
DD
+9 +36 V
DV
DD
+2.7 +5.5 V
IOV
DD
(18)
+1.8 +5.5 V
Normal operation, midscale code, output unloaded 4.5 7 mA
AI
DD
Power down, output unloaded 35 µA
Normal operation 70 μA
DI
DD
Power down 36 μA
Normal operation, V
IH
= IOV
DD
, V
IL
= DGND 5 μA
IOI
DD
Power down, V
IH
= IOV
DD
, V
IL
= DGND 5 μA
Power dissipation Normal operation 140 225 mW
TEMPERATURE RANGE
Specified performance –40 +105 °C
(17) Specified by design.
(18) IOV
DD
≤ DV
DD
.
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): DAC8218