Datasheet

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PACKAGE/ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
(1)
ELECTRICAL CHARACTERISTICS
DAC7811
SBAS337C APRIL 2005 REVISED JULY 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
For the most current package and ordering information, see the Package Option Addendum at the end of this
document, or see the TI website at www.ti.com .
Over operating free-air temperature range (unless otherwise noted).
DAC7811 UNIT
V
DD
to GND –0.3 to +7.0 V
Digital input voltage to GND –0.3 to V
DD
+ 0.3 V
I
OUT
1, I
OUT
2 to GND –0.3 to V
DD
+ 0.3 V
Operating temperature range –40 to +125 ° C
Storage temperature range –65 to +150 ° C
Junction temperature (T
J
max) +150 ° C
ESD Rating, HBM 2000 V
ESD Rating, CDM 1000 V
(1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
V
DD
= +2.7 V to +5.5 V; I
OUT
1 = Virtual GND; I
OUT
2 = 0V; V
REF
= +10 V; T
A
= full operating temperature. All specifications
–40 ° C to +125 ° C, unless otherwise noted.
DAC7811
PARAMETER CONDITIONS MIN TYP MAX UNITS
STATIC PERFORMANCE
Resolution 12 Bits
Relative accuracy ±1 LSB
Differential nonlinearity ±1 LSB
Output leakage current Data = 0000h, T
A
= +25 ° C ±5 nA
Output leakage current Data = 0000h, T
A
= T
MAX
±25 nA
Full-scale gain error All ones loaded to DAC register ±5 ±10 mV
Full-scale tempco
(1)
± 5 ppm/ °C
Output capacitance
(1)
Code dependent 5 pF
(1) Specified by design and characterization; not production tested.
2
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