Datasheet

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ELECTRICAL CHARACTERISTICS
DAC7573
SLAS398 SEPTEMBER 2003
V
DD
= 2.7 V to 5.5 V, R
L
= 2 k to GND; C
L
= 200 pF to GND; all specifications -40 ° C to +105 ° C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
STATIC PERFORMANCE
(1) (2)
Resolution 12 Bits
Relative accuracy ± 8 LSB
Differential nonlinearity Specified monotonic by design ± 1 LSB
Zero-scale error 5 20 mV
Full-scale error -0.15 ± 1.0 % of FSR
Gain error ± 1.0 % of FSR
Zero code error drift ± 7 µV/ °C
Gain temperature coefficient ± 3 ppm of FSR/ °C
OUTPUT CHARACTERISTICS
(3)
Output voltage range 0 V
REF
H V
Output voltage settling time (full scale) R
L
= ; 0 pF < C
L
< 200 pF 8 10 µs
R
L
= ; C
L
= 500 pF 12 µs
Slew rate 1 V/ µs
DC crosstalk (channel-to-channel) 0.02 LSB
AC crosstalk (channel-to-channel) 1 kHz Sine Wave -100 dB
Capacitive load stability R
L
= 470 pF
R
L
= 2 k 1000 pF
Digital-to-analog glitch impulse 1 LSB change around major 12 nV-s
carry
Digital feedthrough 0.3 nV-s
DC output impedance 1
Short-circuit current V
DD
= 5 V 50 mA
V
DD
= 3 V 20 mA
Power-up time Coming out of power-down 2.5 µs
mode, V
DD
= +5 V
Coming out of power-down 5 µs
mode, V
DD
= +3 V
REFERENCE INPUT
V
REF
H Input range 0 V
DD
V
V
REF
L Input range V
REF
L<V
REF
H 0 GND V
DD
V
Reference input impedance 25 k
Reference current V
REF
=V
DD
= +5 V 185 260 µA
V
REF
=V
DD
= +3 V 122 200
LOGIC INPUTS
(3)
Input current ± 1 µA
V
IN_L
, Input low voltage 0.3xIOV
DD
V
V
IN_H
, Input high voltage V
DD
= 3 V 0.7xIOV
DD
V
Pin Capacitance 3 pF
POWER REQUIREMENTS
V
DD
, IOV
DD
2.7 5.5 V
I
DD
(normal operation), including reference current Excluding load current
I
DD
@ V
DD
=+3.6V to +5.5V V
IH
= IOV
DD
and V
IL
=GND 600 900 µA
I
DD
@ V
DD
=+2.7V to +3.6V V
IH
= IOV
DD
and V
IL
=GND 550 750 µA
I
DD
(all power-down modes)
(1) Linearity tested using a reduced code range of 48 to 4047; output unloaded.
(2) V
REF
H = V
DD
- 0.1, V
REF
L = GND
(3) Specified by design and characterization, not production tested.
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