Datasheet

DAC7565
SBAS412B –FEBRUARY 2008–REVISED MARCH 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
RELATIVE DIFFERENTIAL REFERENCE SPECIFIED
ACCURACY NONLINEARITY DRIFT PACKAGE- PACKAGE TEMPERATURE PACKAGE
PRODUCT (LSB) (LSB) (ppm/°C) LEAD DESIGNATOR RANGE MARKING
DAC7565A ±1 ±0.5 25 TSSOP-16 PW –40°C to +105°C DAC7565
DAC7565C ±1 ±0.5 5 TSSOP-16 PW –40°C to +105°C DAC7565
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
DAC7565 UNIT
AV
DD
to GND –0.3 to +6 V
Digital input voltage to GND –0.3 to +V
DD
+ 0.3 V
V
OUT
to GND –0.3 to +V
DD
+ 0.3 V
V
REF
to GND –0.3 to +V
DD
+ 0.3 V
Operating temperature range –40 to +125 °C
Storage temperature range –65 to +150 °C
Junction temperature range (T
J
max) +150 °C
Power dissipation (T
J
max – T
A
)/θ
JA
W
Thermal impedance, θ
JA
+118 °C/W
Thermal impedance, θ
JC
+29 °C/W
Human body model (HBM) 4000 V
ESD rating
Charged device model (CDM) 1500 V
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute
maximum conditions for extended periods may affect device reliability.
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