Datasheet

THD
TH1
TP
pri_tx: ³0´
pri_tx: ³1´
pri_tx: ³'´
ACKB: ³$´
TP
TB
TH0
TA
DAC161P997
SNAS515E –JULY 2011–REVISED OCTOBER 2013 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted, these specifications apply for VA = VD = 2.7V to 3.6V, T
A
= 25°C, external bipolar transistor:
2N3904, R
E
= 22Ω, C
1
= C
2
= C
3
= 2.2nF. Boldface limits are over the temperature range of −40°C ≤ T
A
≤ 105 ° C unless
otherwise noted.
Symbol Parameter Conditions Min Typ Max Units
Leakage current when output device
ACKB 1
is off
IOZ µA
Leakage current when output device
ERRB 1
is off
SWIF TIMING
Symbol rate: 1/TP 0.3 19.2 kHz
“D” symbol duty cycle: THD/TP 7/16 1/2 9/16
“0” symbol duty cycle: TH0/TP 3/16 1/4 5/16
"1” symbol duty cycle: TH1/TP 11/16 3/4 13/16
ACKB assert: TA/TP 1/16 1/4 4/8
ACKB deassert: TB/TP 12/8 7/4 31/16
Internal Timer
TM Timeout Period 90 100 110 ms
SINGLE-WIRE INTERFACE (SWIF) TIMING DIAGRAM
See Symbol Set for SWIF waveform description.
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