Datasheet

4
Input Leakage Current I
I
V
CC
or
GND
-6-±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
06-2-20-40µA
HCT TYPES
Input Switch Points V
T
+ - - 4.5 1.2 1.9 1.2 1.9 1.2 1.9 V
5.5 1.4 2.1 1.4 2.1 1.4 2.1 V
V
T
- 4.5 0.5 1.2 0.5 1.2 0.5 1.2 V
5.5 0.6 1.4 0.6 1.4 0.6 1.4 V
V
H
4.5 0.4 1.4 0.4 1.4 0.4 1.4 V
5.5 0.4 1.5 0.4 1.5 0.4 1.5 V
High Level Output
Voltage CMOS Loads
V
OH
V
T
- -0.02 4.5 4.4 - 4.4 - 4.4 - V
High Level Output
Voltage TTL Loads
-4 4.5 3.98 - 3.84 - 3.7 - V
Low Level Output Voltage
CMOS Loads
V
OL
V
T
+ 0.02 4.5 - 0.1 - 0.1 - 0.1 V
Low Level Output Voltage
TTL Loads
4 4.5 - 0.26 - 0.33 - 0.4 V
Input Leakage Current I
I
V
CC
and
GND
- 5.5 - ±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
0 5.5 - 2 - 20 - 40 µA
Additional Quiescent
Device Current Per Input
Pin: 1 Unit Load
∆I
CC
(Note 2)
V
CC
- 2.1
- 4.5 to
5.5
- 360 - 450 - 490 µA
NOTE:
2. For dual-supply systems theoretical worst case (V
I
= 2.4V, V
CC
= 5.5V) specification is 1.8mA.
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C -40
o
C TO 85
o
C -55
o
C TO 125
o
C
UNITSV
I
(V) I
O
(mA) MIN MAX MIN MAX MIN MAX
HCT Input Loading Table
INPUT UNIT LOADS
nA 0.6
NOTE: Unit Load is ∆I
CC
limit specified in DC Electrical Specifica-
tions table, e.g., 360µA max at 25
o
C.
CD54HC14, CD74HC14, CD54HCT14, CD74HCT14