Datasheet

4
Input Leakage
Current
I
I
V
CC
or
GND
-6--±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
0 6 - - 2 - 20 - 40 µA
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C -40
o
C TO 85
o
C -55
o
C TO 125
o
C
UNITSV
I
(V) I
O
(mA) MIN TYP MAX MIN MAX MIN MAX
Switching Specifications Input t
r
, t
f
= 6ns
PARAMETER SYMBOL
TEST
CONDITIONS V
CC
(V)
25
o
C -40
o
C TO 85
o
C -55
o
C TO 125
o
C
UNITSTYP MAX MAX MAX
HC TYPES
Propagation Delay t
PLH,
t
PHL
C
L
= 50pF 2 - 115 145 150 ns
4.5 - 23 29 35 ns
6 - 30 25 30 ns
Propagation Delay Time, Any
Input
t
PLH,
t
PHL
C
L
= 15pF 5 9 - - - ns
Output Transition Times
(Figure 1)
t
TLH
, t
THL
C
L
= 50pF 2 - 75 95 110 ns
4.5 - 15 19 22 ns
6 - 13 16 19 ns
Input Capacitance C
IN
---1010 10pF
Power Dissipation
Capacitance
C
PD
(Note 2)
C
L
= 15pF 5 33 - - - pF
NOTE:
2. C
PD
is used to determine the dynamic power consumption per gate, P
D
=V
CC
2
f
i
(C
PD
+C
L
) where f
i
= Input Frequency, C
L
= Output
Load Capacitance, V
CC
= Supply Voltage.
Test Circuit and Waveform
FIGURE 1. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC
t
PHL
t
PLH
t
THL
t
TLH
90%
50%
10%
50%
10%
INVERTING
OUTPUT
INPUT
GND
V
CC
t
r
= 6ns t
f
= 6ns
90%
CD54HC7266, CD74HC7266