Datasheet

− 4 −
Absolute Maximum Ratings Thermal Information
DC Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . −0.5V to 7V
DC Input Diode Current, I
IK
For V
I
< −0.5V or V
I
> V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . . . .±
20mA
DC Output Diode Current, I
OK
For V
O
< −0.5V or V
O
> V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . .±
20mA
DC Output Source or Sink Current per Output Pin, I
O
For V
O
> −0.5V or V
O
< V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . .±
25mA
DC V
CC
or Ground Current, I
CC
. . . . . . . . . . . . . . . . . . . . . . . . .±
50mA
Operating Conditions
Temperature Range (T
A
) . . . . . . . . . . . . . . . . . . . . .−55
o
C to 125
o
C
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V
I
, V
O
. . . . . . . . . . . . . . . . . 0V to V
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400ns (Max)
Package Thermal Impedance,
θ
JA
(see Note 2):
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
o
C/W
M (SOIC) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
o
C/W
NS (SOP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64oC/W
PW (TSSOP) Package. . . . . . . . . . . . . . . . . . . . . . . . . .108
o
C/W
Maximum Junction Temperature (Plastic Package) . . . . . . . . . 150
o
Maximum Storage Temperature Range . . . . . . . . . . .−65
o
C to 150
o
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . 300
o
SOIC − Lead Tips Only)
CAUTION: Stresses above those listed in ÒAbsoluteMaximum RatingsÓmay cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the oper ational sections of this speci
cation is not implied.
NOTE:
2. The package thermal impedance is calculated in accordance with JESD 51−7.
DC Electrical Speci cations
PARAMETER SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C −40
o
C TO 85
o
C −55
o
C TO 125
o
C
UNITSV
I
(V) I
O
(mA) MIN TYP MAX MIN MAX MIN MAX
HC TYPES
High Level Input
Voltage
V
IH
−−2 1.5 −−1.5 − 1.5 − V
4.5 3.15 −−3.15 − 3.15 − V
6 4.2 −−4.2 − 4.2 − V
Low Level Input
Voltage
V
IL
−−2 −−0.5 − 0.5 − 0.5 V
4.5 −−1.35 − 1.35 − 1.35 V
6 −−1.8 − 1.8 − 1.8 V
High Level Output
Voltage
CMOS Loads
V
OH
V
IH
or V
IL
−0.02 2 1.9 −−1.9 − 1.9 − V
−0.02 4.5 4.4 −−4.4 − 4.4 − V
−0.02 6 5.9 −−5.9 − 5.9 − V
High Level Output
Voltage
TTL Loads
−−−−−−−−−V
−4 4.5 3.98 −−3.84 − 3.7 − V
−5.2 6 5.48 −−5.34 − 5.2 − V
Low Level Output
Voltage
CMOS Loads
V
OL
V
IH
or V
IL
0.02 2 −−0.1 − 0.1 − 0.1 V
0.02 4.5 −−0.1 − 0.1 − 0.1 V
0.02 6 −−0.1 − 0.1 − 0.1 V
Low Level Output
Voltage
TTL Loads
−−−−−−−−−V
4 4.5 −−0.26 − 0.33 − 0.4 V
5.2 6 −−0.26 − 0.33 − 0.4 V
Input Leakage
Current
I
I
V
CC
or
GND
− 6 −−
±
0.1 −
±
1 −
±
1
μ
A
Quiescent Device
Current
I
CC
V
CC
or
GND
06−−8 − 80 − 160
μ
A
CD54HC4094, CD74HC4094, CD74HCT4094