Datasheet

ELECTRICAL CHARACTERISTICS: V
S
= ± 5V
BUF602
www.ti.com ...................................................................................................................................................... SBOS339B – OCTOBER 2005 – REVISED MAY 2008
Boldface limits are tested at +25 ° C.
At R
L
= 100 Ω , unless otherwise noted.
BUF602ID, IDBV
TYP MIN/MAX OVER TEMPERATURE
0 ° C to – 40 ° C to MIN/
PARAMETER CONDITIONS +25 ° C +25 ° C
(2)
70 ° C
(3)
+85 ° C
(3)
UNITS MAX TEST LEVEL
(1)
AC PERFORMANCE (See figure 30)
Bandwidth V
O
= 500mV
PP
1000 560 550 540 MHz min B
V
O
= 1V
PP
920 MHz typ C
Full Power Bandwidth V
O
= 5V
PP
880 MHz typ C
Bandwidth for 0.1dB Flatness V
O
= 500mV
PP
240 MHz typ C
Slew Rate V
O
= 5V Step 8000 7000 6000 5000 V/ µ s min B
Rise Time and Fall Time V
O
= 0.2V Step 350 625 640 650 ps max B
Settling Time to 0.05% V
O
= 1V Step 6 ns typ C
Harmonic Distortion V
O
= 2V
PP
, 5MHz
2nd-Harmonic R
L
= 100 Ω – 57 – 44 – 44 – 42 dBc max B
R
L
= 500 Ω – 76 – 63 – 62 – 60 dBc max B
3rd-Harmonic R
L
= 100 Ω – 68 – 63 – 63 – 63 dBc max B
R
L
= 500 Ω – 98 – 85 – 84 – 82 dBc max B
Input Voltage Noise f > 100kHz 4.8 5.1 5.6 6.0 nV/ √ Hz max B
Input Current Noise f > 100kHz 2.1 2.6 2.7 2.8 pA/ √ Hz max B
Differential Gain NTSC, R
L
= 150 Ω to 0V 0.15 % typ C
Differential Phase NTSC, R
L
= 150 Ω to 0V 0.04 ° typ C
BUFFER DC PERFORMANCE
(4)
Maximum Gain R
L
= 500 Ω 0.99 1 1 1 V/V max A
Minimum Gain R
L
= 500 Ω 0.99 0.98 0.98 0.98 V/V min A
Input Offset Voltage ± 16 ± 30 ± 36 ± 38 mV max A
Average Input Offset Voltage Drift ± 125 ± 125 µ V/ ° C max B
Input Bias Current ± 3 ± 7 ± 8 ± 8.5 µ A max A
Average Input Bias Current Drift ± 20 ± 20 nA/ ° C max B
BUFFER INPUT
Input Impedance 1.0 || 2.1 M Ω || pF typ C
BUFFER OUTPUT
Output Voltage Swing R
L
= 100 Ω ± 3.8 ± 3.7 ± 3.7 ± 3.7 V min B
R
L
= 500 Ω ± 4.0 ± 3.8 ± 3.8 ± 3.8 V min A
Output Current (Continuous) V
O
= 0V ± 60 ± 50 ± 49 ± 48 mA min A
Peak Output Current V
O
= 0V ± 350 mA typ C
Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C
POWER SUPPLY
Specified Operating Voltage ± 5 V typ C
Maximum Operating Voltage ± 6.3 ± 6.3 ± 6.3 V max A
Minimum Operating Voltage ± 1.4 ± 1.4 ± 1.4 V min B
Maximum Quiescent Current V
S
= ± 5V 5.8 6.3 6.9 7.2 mA max A
Minimum Quiescent Current V
S
= ± 5V 5.8 5.3 4.9 4.3 mA min A
Power-Supply Rejection Ratio (+PSRR) 54 48 46 45 dB min A
THERMAL CHARACTERISTICS
Specification: ID – 40 to +85 ° C typ C
Thermal Resistance θ
JA
D SO-8 Junction-to-Ambient 125 ° C/W typ C
DBV SOT23-5 Junction-to-Ambient 150 ° C/W typ C
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25 ° C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +8 ° C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
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