Datasheet

DESCRIPTION (CONTINUED)
bq78PL114
SLUS850B – SEPTEMBER 2008 – REVISED APRIL 2009 ................................................................................................................................................ www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Temperature is sensed by up to 12 external sensors and one on-chip sensor. This permits accurate temperature
monitoring of each cell individually. Firmware is then able to compensate for the temperature-induced effects on
capacity, impedance, and OCV on a cell-by-cell basis, resulting in superior charge/ discharge and balancing
control.
External MOSFET control inputs provide user- definable direct hardware control over MOSFET states. Smart
control prevents excessive current through MOSFET body diodes. Auxiliary inputs can be used for enhanced
safety and control in large multicell arrays.
The bq78PL114 is completely user-configurable, with parametric tables in flash memory to suit a variety of cell
chemistries, operating conditions, safety controls, and data reporting needs. It is easily configured using the
supplied bqWizard™ graphical user interface (GUI). The device is fully programmed and requires no algorithm or
firmware development.
The bq78PL114 can be upgraded to the bq78PL114S12 by downloading the bq78PL114S12 firmware. The
firmware can be downloaded using the bqWizard application or during manufacturing. Upgrading to the
bq78Pl114S12 changes the functionality of the LED1 – LED5, LEDEN, and N/C pin #29. The bq78PL114S12 pin
functions of LED1/SEG1 – LED5/SEG5, PSH/BP/TP, and FIELD support LED, LCD, and electronic paper displays
(EPDs). The user can configure the bq78PL114S12 for the desired display type.
In this document all descriptions for the bq78PL114 apply to the bq78PL114S12 except where different
bq78PL114S12 functionality is specifically described.
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