Datasheet

bq3060
SLUS928A –MARCH 2009–REVISED NOVEMBER 2009 www.ti.com
FLASH
PARAMETER
(1)
TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write-cycles 20k Cycles
t
(ROWPROG)
Row programming time 2 ms
t
(MASSERASE)
Mass-erase time 250 ms
t
(PAGEERASE)
Page-erase time 25 ms
I
CC(PROG)
Flash-write supply current 4 6 mA
TA = –40°C to 0°C 8 22
I
CC(ERASE)
Flash-erase supply current mA
T
A
= 0°C to 85°C 3 15
(1) Specified by design. Not production tested
RAM BACKUP
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
(RBI)
RBI data-retention input current V
RBI
> V
(RBI)MIN
, V
REG27
< V
REG27IT-
, T
A
= 20 1500 nA
70°C to 110°C
V
RBI
> V
(RBI)MIN
, V
REG27
< V
REG27IT-
, T
A
= 500
–40°C to 70°C
V
(RBI)
RBI data-retention voltage
(1)
1 V
(1) Specified by design. Not production tested.
CURRENT PROTECTION THRESHOLDS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RSNS = 0 50 200
V
(OCD)
OCD detection threshold voltage range, typical mV
RSNS = 1 25 100
RSNS = 0 10
ΔV
(OCDT)
OCD detection threshold voltage program step mV
RSNS = 1 5
RSNS = 0 –100 –300
V
(SCCT)
SCC detection threshold voltage range, typical mV
RSNS is set in
RSNS = 1 –50 –225
STATE_CTL
RSNS = 0 -50
register
ΔV
(SCCT)
SCC detection threshold voltage program step mV
RSNS = 1 -25
RSNS = 0 100 450
V
(SCDT)
SCD detection threshold voltage range, typical mV
RSNS = 1 50 225
RSNS = 0 50
ΔV
(SCDT)
SCD detection threshold voltage program step mV
RSNS = 1 25
V
(OFFSET)
SCD, SCC and OCD offset –10 10
mV
V
(Scale_Err)
SCD, SCC and OCD scale error –10% 10%
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