Datasheet

t
(B)
t
(BR)
t
(HW1)
t
(HW0)
t
(CYCH)
t
(DW1)
t
(DW0)
t
(CYCD)
Break
7-bitaddress
8-bitdata
(a) BreakandBreakRecovery
(c) Host TransmittedBit
(d) Gauge TransmittedBit
(e) GaugetoHostResponse
1.2V
t
(RISE)
(b) HDQlinerisetime
1-bit
R/W
t
(RSPS)
bq27541-G1
SLUSAL6C –NOVEMBER 2011–REVISED OCTOBER 2012 www.ti.com
ADC (TEMPERATURE AND CELL VOLTAGE) CHARACTERISTICS (continued)
T
A
= –40°C to 85°C, C
(REG)
= 0.47μF, 2.45 V < V
(REGIN)
= V
BAT
< 5.5 V; typical values at T
A
= 25°C and V
(REGIN)
= V
BAT
= 3.6 V
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
lkg(ADC)
Input leakage current
(1)
0.3 μA
DATA FLASH MEMORY CHARACTERISTICS
T
A
= –40°C to 85°C, C
(REG)
= 0.47μF, 2.45 V < V
(REGIN)
= V
BAT
< 5.5 V; typical values at T
A
= 25°C and V
(REGIN)
= V
BAT
= 3.6 V
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
DR
Data retention
(1)
10 Years
Flash programming write-cycles
(1)
20,000 Cycles
t
WORDPROG
Word programming time
(1)
2 ms
I
CCPROG
Flash-write supply current
(1)
5 10 mA
(1) Specified by design. Not production tested.
HDQ COMMUNICATION TIMING CHARACTERISTICS
T
A
= –40°C to 85°C, C
REG
= 0.47μF, 2.45 V < V
REGIN
= V
BAT
< 5.5 V; typical values at T
A
= 25°C and V
REGIN
= V
BAT
= 3.6 V
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
(CYCH)
Cycle time, host to bq27541-G1 190 μs
t
(CYCD)
Cycle time, bq27541-G1 to host 190 205 250 μs
t
(HW1)
Host sends 1 to bq27541-G1 0.5 50 μs
t
(DW1)
bq27541-G1 sends 1 to host 32 50 μs
t
(HW0)
Host sends 0 to bq27541-G1 86 145 μs
t
(DW0)
bq27541-G1 sends 0 to host 80 145 μs
t
(RSPS)
Response time, bq27541-G1 to host 190 950 μs
t
(B)
Break time 190 μs
t
(BR)
Break recovery time 40 μs
t
(RISE)
HDQ line rising time to logic 1 (1.2V) 950 ns
Figure 1. Timing Diagrams
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