Datasheet

www.ti.com
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
bq27010 , bq27210
SLUS707B – APRIL 2006 – REVISED JANUARY 2007
MIN MAX UNIT
V
CC
Supply voltage 2.6 4.5 V
T
A
Operating free-air temperature –20 70 ° C
Input voltage, SRP and SRN with respect to V
SS
–100 100 mV
over operating free-air temperature range and supply voltage range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GENERAL
I
CC(VCC)
Active current 52 90
I
CC(SLP)
Sleep current V
BAT
= V
CC
1.0 2.5
µA
I
CC(SHP)
Ship current (bq27010 only) 0.9 2.0
I
CC(POR)
Hibernate current 0 < V
CC
< 1.5 V 0.6 1.5
RBI pin only, V
CC
<
RBI current < 1 20 nA
V
CC(POR)
V
(POR)
POR threshold 2.0 2.6 V
Input impedance BAT, SRN, SRP 10 M Ω
Pull-down current HDQ, SCL, SDA 2.7 4.5 µA
HDQ, SCL, SDA and GPIO
V
CC
< 4.2 V 1.5
V
IH
High-level input voltage
V
CC
> 4.2 V 1.7
V
IL
Low-level input voltage 0.7 V
Low-level output voltage (GPIO) I
OL
= 1 mA 0.4
V
OL
Low-level output voltage (HDQ, SCL, SDA) I
OL
= 2 mA 0.4
VOLTAGE AND TEMPERATURE MEASUREMENT
Measurement range V
CC
= V
(BAT)
2.6 4.5 V
Reported voltage resolution 2.7
mV
Reported accuacy -25 25
Voltage update time 2.56 s
Reported temperature resolution 0.25
° K
Reported temperature accuracy -3 3
Temperature update time 2.56 s
TIME, CURRENT AND CAPACITY (3.0 V ≤ V
CC
≤ 4.2 V, 0 ° C ≤ T
A
≤ 50 ° C)
f
OSC
Internal oscillator frequency -2.2% 1.5%
Current gain variability -0.5% 0.5%
Coulometric gain variability -1.7% 0.5%
Coulomb counter input offset
(1)
-15 0 15 µV
V
SRP
-V
SRN
differential input –100 100 mV
EEPROM PROGRAMMING ( V
CC
≥ 3.0 V, -20 ° C ≤ T
A
≤ 35 ° C)
(2)
Programming voltage rise time 0.5 1.5 ms
Programming voltage high time 10 100 ms
Programming voltage fall time 0.5 1.5 ms
Programming voltage Applied to PGM pin 20 22 V
EEPROM programming current V
PROGRAM
= 21 V 15 mA
(1) Excludes contributions to the offset due to PCB layout or other factors external to the bq27010/bq27210.
(2) Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at T
A
= 85 ° C.
3
Submit Documentation Feedback