Datasheet

bq24765
www.ti.com SLUS999 –NOVEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
7.0 V ≤ V(DCINA) ≤ 24 V, 0°C < T
J
< +125°C, typical values are at T
A
= 25°C, with respect to AGND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ADAPTER CURRENT SENSE AMPLIFIER
V
CSSP/N_OP
Input common mode range Voltage on CSSP/CSSN 0 24 V
V
VICM
VICM output voltage range 0 2 V
I
VICM
VICM Output Current 0 1 mA
A
VICM
Current sense amplifier voltage A
VICM
= V
VICM
/ V
IREG_DPM
20 V/V
gain
V
IREG_DPM
= V(CSSP–CSSN) ≥ 40 mV –2% 2%
V
IREG_DPM
= V(CSSP–CSSN) = 20 mV –3% 3%
Adapter current sense accuracy
V
IREG_DPM
= V(CSSP–CSSN) = 5 mV –25% 25%
V
IREG_DPM
= V(CSSP–CSSN) = 1.5 mV –33% 33%
I
VICM_LIM
Output current limit V
VICM
= 0 V 1 mA
C
VICM_MAX
Maximum output load capacitance For stability with 0 mA to 1 mA load 100 pF
ACIN COMPARATOR (Adapter Detect)
V
DCIN_VFB_OP
Differential voltage from DCINA to –20 24 V
VFB
V
ACIN_CHG
ACIN rising threshold Min voltage to enable charging, V
ACIN
rising 2.376 2.40 2.424 V
V
ACIN_CHG_HYS
ACIN falling hysteresis V
ACIN
falling 40 mV
ACIN rising deglitch
(1)
V
ACIN
rising 100 μs
V
ACIN_BIAS
Adapter present rising threshold Min voltage to enable all bias, V
ACIN
rising 0.56 0.62 0.68 V
V
ACIN_BIAS_HYS
Adapter present falling hysteresis V
ACIN
falling 20 mV
V(DCIN–VFB) COMPARATOR (Reverse Discharging Protection)
V
DCIN-VFB_FALL
DCIN to VFB falling threshold V
DCIN
– V
VFB
falling 140 185 240 mV
V
DCIN-VFB__HYS
DCIN to VFB hysteresis 50 mV
DCIN to VFB rising deglitch V
DCIN
– V
VFB
> V
DCIN-VFB_RISE
1 ms
VFB OVERVOLTAGE COMPARATOR
V
OV_RISE
Over-voltage rising threshold As percentage of V
VFB_REG
104%
V
OV_FALL
Over-voltage falling threshold As percentage of V
VFB_REG
102%
VFB BATSHORT COMPARATOR (Undervoltage)
V
VFB_SHORT_RISE
VFB short rising threshold 2.6 2.7 2.85 V
V
VFB_SHORT_HYS
VFB short falling hysteresis 250 mV
V
VFB_SHORT_ICHG
VFB short precharge current 60 220 mA
VFB BATLOWV COMPARATOR
V
VFB_LOWV_RISE
VFB LOWV rising threshold 3.9 4 4.1 V
V
VFB_LOWV_HYS
VFB LOWV falling hysteresis 400 mV
VFB LOWV one-shot reset time Time to time charger 2 ms
V
VFB_LOWV_ICHG
VFB LOWV max DAC output VFB falling, on 10mΩ resistor 3 A
CHARGE OVER-CURRENT COMPARATOR – Average current using sense resistor
Charge overcurrent falling V(CSOP-CSON) > 33mV, as percentage of I
REG_CHG
145%
threshold
Minimum current limit V(CSOP-CSON) < 33mV 50 mV
Internal filter pole frequency 160 kHz
CHARGE OVER-CURRENT COMPARATOR – Cycle-by-Cycle Maximum current using High-Side SenseFet
Charge over-current rising
V
OCP_CycleByCycle
threshold, latches off high-side High-side drain current rising-edge. 8 10 12 A
MOSFET until next cycle.
(1) Verified by design.
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s) :bq24765