Datasheet

Not Recommended for New Designs
bq24725
www.ti.com SLUS702A –JULY 2010–REVISED NOVEMBER 2010
ELECTRICAL CHARACTERISTICS (continued)
4.5 V ≤ V
VCC
≤ 24 V, 0°C ≤ T
J
≤ 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CHARGE OVER CURRENT COMPARATOR (CHG_OCP)
ChargeCurrent()=0x0xxxH 54 60 66 mV
Charge over current rising threshold,
V
OCP_RISE
measure voltage drop across current ChargeCurrent()=0x1000H – 0x17C0H 80 90 100 mV
sensing resistor
ChargeCurrent()=0x1800 H– 0x1FC0H 110 120 130 mV
CHARGE UNDER CURRENT COMPARATOR (CHG_UCP)
V
UCP_FALL
Charge undercurrent falling threshold V
SRP
falling towards V
SRN
1 5 9 mV
LIGHT LOAD COMPARATOR (LIGHT_LOAD)
V
LL_FALL
Light load falling threshold 1.25 mV
Measure the voltage drop across current sensing
resistor
V
LL_RISE_HYST
Light load rising hysteresis 1.25 mV
BATTERY DEPLETION COMPARATOR (BAT_DEPL) [1]
ChargeOption() bit [12:11] = 00 55.53% 59.19% 62.84%
Battery Depletion Falling Threshold,
ChargeOption() bit [12:11] = 01 58.68% 62.65% 66.62%
V
BATDEPL_FALL
percentage of voltage regulation limit, V
SRN
ChargeOption() bit [12:11] = 10 62.17% 66.55% 70.93%
falling
ChargeOption() bit [12:11] = 11 (Default) 66.06% 70.97% 75.88%
ChargeOption() bit [12:11] = 00 225 305 385 mV
ChargeOption() bit [12:11] = 01 240 325 410 mV
Battery Depletion Rising Hysteresis, V
SRN
V
BATDEPL_RHYST
rising
ChargeOption() bit [12:11] = 10 255 345 435 mV
ChargeOption() bit [12:11] = 11 (Default) 280 370 460 mV
Battery Depletion Rising Deglitch Delay to turn off ACFET and turn on BATFET during
t
BATDEPL_RDEG
600 ms
(Specified by design) LEARN cycle
BATTERY LOWV COMPARATOR (BAT_LOWV)
V
BATLV_FALL
Battery LOWV falling threshold V
SRN
falling 2.4 2.5 2.6 V
V
BATLV_RHYST
Battery LOWV rising hysteresis V
SRN
rising 200 mV
I
BATLV
Battery LOWV charge current limit 10 mΩ current sensing resistor 0.5 A
THERMAL SHUTDOWN COMPARATOR (TSHUT)
T
SHUT
Thermal shutdown rising temperature Temperature rising 155 °C
T
SHUT_HYS
Thermal shutdown hysteresis, falling Temperature falling 20 °C
ILIM COMPARATOR
V
ILIM_FALL
ILIM as CE falling threshold V
ILIM
falling 60 75 90 mV
V
ILIM_RISE
ILIM as CE rising threshold V
ILIM
rising 90 105 120 mV
LOGIC INPUT (SDA, SCL)
V
IN_ LO
Input low threshold 0.8 V
V
IN_ HI
Input high threshold 2.1 V
I
IN_ LEAK
Input bias current V = 7 V –1 1 μA
LOGIC OUTPUT OPEN DRAIN (ACOK, SDA)
V
OUT_ LO
Output saturation voltage 5 mA drain current 500 mV
I
OUT_ LEAK
Leakage current V = 7 V –1 1 μA
ANALOG INPUT (ACDET, ILIM)
I
IN_ LEAK
Input bias current V = 7 V –1 1 μA
PWM OSCILLATOR
F
SW
PWM switching frequency ChargeOption () bit [9] = 0 (Default) 600 750 900 kHz
F
SW+
PWM increase frequency ChargeOption() bit [10:9] = 11 665 885 1100 kHz
F
SW–
PWM decrease frequency ChargeOption() bit [10:9] = 01 465 615 765 kHz
BATFET GATE DRIVER (BATDRV)
I
BATFET
BATDRV charge pump current limit 40 60 µA
V
BATFET
Gate drive voltage on BATFET V
BATDRV
- V
SRN
when V
SRN
> UVLO 5.5 6.1 6.5 V
Minimum load resistance between
R
BATDRV_LOAD
500 kΩ
BATDRV and SRN
R
BATDRV_OFF
BATDRV turn-off resistance I = 30µA 5 6.2 7.4 kΩ
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