Datasheet

VCC
BATDRV
REGN
BTST
HIDRV
PHASE
LODRV
GND
SRP
SRN
Q4
Sis412DN
L1
4.7µH
SYSTEM
C10
10µF
RSR
10m?
R1
430k
R2
66.5k
C2
0.1µF
U1
bq24725
C8
10uF
Q3
Sis412DN
Q5 (BATFET)
FDS6680A
C7
0.047µF
Adapter +
RAC 10m?
Pack +
C6
1µF
HOST
Dig I/O
SMBus
+3.3V
C4
100p
R4
10k
R5
10k
R7
549k
ACN
ACP
CMSRC
ACDRV
ACDET
ILIM
SDA
SCL
ACOK
IOUT
Ci
2.2µF
Ri
2?
R9
10Ω
R3
10k
R8
100k
R10
4.02k
R11
4.02k
D1
BAT54
C9
10uF
C11
10µF
Pack -
C3
0.1µF
C5
1µF
R6
4.02k
C1
0.1µF
Total
Csys
220µF
C15
0.01µF
C16
0.1µF
C17
2200pF
Adapter -
ADC
Q1 (ACFET)
FDS6680A
D3
PDS1040
PowerPad
C13
0.1µF
C14
0.1µF
R14
10Ω
R15
7.5Ω
*
*
Not Recommended for New Designs
bq24725
www.ti.com SLUS702A –JULY 2010–REVISED NOVEMBER 2010
F
s
= 750kHz, I
ADPT
= 2.688A, I
CHRG
= 1.984A, I
LIM
= 2.54A, V
CHRG
= 12.592V, 65W adapter and 3S2P battery pack
See the application information about negative output voltage protection for hard shorts on battery to ground or
battery reverse connection.
Figure 2. Typical System Schematic with One NMOS Selector and Schottky Diode
ORDERING INFORMATION
ORDERING NUMBER
PART NUMBER IC MARKING PACKAGE QUANTITY
(Tape and Reel)
bq24725RGRR 3000
bq24725 BQ725 20-PIN 3.5 x 3.5mm
2
QFN
bq24725RGRT 250
THERMAL INFORMATION
bq24725
THERMAL METRIC
(1)
UNITS
RGR (20 PIN)
θ
JA
Junction-to-ambient thermal resistance
(2)
46.8
ψ
JT
Junction-to-top characterization parameter
(3)
0.6 °C/W
ψ
JB
Junction-to-board characterization parameter
(4)
15.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-top characterization parameter, ψ
JT
, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ
JA
, using a procedure described in JESD51-2a (sections 6 and 7).
(4) The junction-to-board characterization parameter, ψ
JB
, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ
JA
, using a procedure described in JESD51-2a (sections 6 and 7).
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