Datasheet

VCC
BATDRV
REGN
BTST
HIDRV
PHASE
LODRV
GND
SRP
SRN
Q4
Sis412DN
L1
4.7µH
SYSTEM
C10
10µF
RSR
10m?
R1
430k
R2
66.5k
C2
0.1µF
U1
bq24725
C8
10uF
Q3
Sis412DN
Q5 (BATFET)
FDS6680A
C7
0.047µF
Adapter +
RAC 10m?
Pack +
C13
0.1µF
C6
1µF
HOST
Dig I/O
SMBus
+3.3V
C4
100p
R4
10k
R5
10k
R7
316k
ACN
ACP
CMSRC
ACDRV
ACDET
ILIM
SDA
SCL
ACOK
IOUT
Ci
2.2µF
Ri
2?
D2
BAT54C
R9
10Ω
R3
10k
R8
100k
R10
4.02k
R11
4.02k
EN
D1
BAT54
C14
0.1µF
C9
10uF
C11
10µF
Pack -
C3
0.1µF
C5
1µF
R6
4.02k
C1
0.1µF
Total
Csys
220µF
C15
0.01µF
C16
0.1µF
C17
2200pF
Adapter -
ADC
U2
IMD2A
Q1 (ACFET)
FDS6680A
Q2 (RBFET)
FDS6680A
PowerPad
R12
1M
R13
3.01M
Q6
BSS138W
Reverse
Input
Protection
Dig I/O
EN
R14
10Ω
R15
7.5Ω
*
*
Not Recommended for New Designs
bq24725
SLUS702A –JULY 2010–REVISED NOVEMBER 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DEVICE INFORMATION
F
s
= 750kHz, I
ADPT
= 4.096A, I
CHRG
= 2.944A, I
LIM
= 4A, V
CHRG
= 12.592V, 90W adapter and 3S2P battery pack
See the application information about negative output voltage protection for hard shorts on battery to ground or
battery reverse connection.
Figure 1. Typical System Schematic with Two NMOS Selector
2 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated
Product Folder Links :bq24725