Datasheet

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ELECTRICAL CHARACTERISTICS (Continued)
V
IBATc
+
(
SRP * SRN
)
GTR Total Accuracy in % +
V
IBATm
* V
IBATc
V
IBATm
100
bq24702
bq24703
SLUS553E – MAY 2003 – REVISED OCTOBER 2007
– 40 ° C ≤ T
J
≤ 125 ° C, 7 V
DC
≤ V
CC
≤ 28 V
DC
, all voltages relative to V
SS
(unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MOSFET GATE DRIVE
AC driver R
DS(on)
high V
CC
= 18 V, I
( ACDRV)
= 1 mA 85 150 Ω
AC driver R
DS(on)
low V
CC
= 18 V, I
( ACDRV)
= 1 mA 55 110 Ω
Battery driver R
DS(on)
high V
CC
= 18 V, I
( BATDRV)
= 1 mA 315 600 Ω
Battery driver R
DS(on)
low V
CC
= 18 V, I
( BATDRV)
= 1 mA 70 115 Ω
Time delay from ac driver off to
t
da
ACSEL 2.4 V ^ 0.2 V 1.2 2 μ s
battery driver on
Time delay from battery driver off to
t
db
ACSEL 0.2 V $ 2.4 V 2.4 3.3 μ s
ac driver on
I
O
= – 10 mA, VCC = 18 V V
CC
– 0.18 V
CC
– 0.09
PWM driver high-level output
V
OH
V
voltage
I
O
= – 50 mA, VCC = 18 V V
CC
– 1.2 V
CC
– 0.8
PWM driver R
DS(on)
high 7 14 Ω
I
O
= 10 mA, VCC = 18 V V
HSP
+0.1 V
HSP
+0.4
V
OL
PWM driver low-level output voltage V
I
O
= 50 mA, VCC = 18 V V
HSP
+0.6 V
HSP
+1.2
PWM driver R
DS(on)
low 5 8.5 Ω
SELECTOR
1.194 1.246 1.286
V
(ACPRES)
AC presence detect voltage V
– 40 ° C to 85 ° C 1.208 1.246 1.285
V
IT(ACPRES)
AC presence hysteresis 1%
t
d(ACPRES)
Deglitch delay for adapter insertion 100 μ s
See
(1)
1.194 1.246 1.286
Battery depletion ALARM trip
V
(BATDEP)
V
voltage
– 40 ° C to 85 ° C 1.208 1.246 1.285
V
(NOBAT)
No battery detect, switch to ACDRV bq24702 only
(1)
0.869 1 1.144 V
– 40 ° C to 85 ° C 0.880 1 1.118
Battery select time (ACSEL low to VS < BATP, 50% threshold, ACSEL
t
(BATSEL)
1 2.5 3.5 μ s
BATDRV low) 2.4 V ↓ 0.2 V
AC select time (ACSEL high to
t
(ACSEL)
ACSEL 0.2 V ↑ 2.4 V 1 2.5 5 μ s
ACDRV low)
V
(VS)
VS voltage to enable BATDRV BATP = 1 V 0.98 1 1.02 V
V
IT(VS)
VS voltage hysteresis VS > BATP 20 35 85 mV
ZERO VOLT OPERATION
(2)
Static drain source on-state
r
DS(on)
V
CC
= 7 V, T
J
= 125 ° C, I
O
= 100 mA 5.3 8.7 Ω
resistance
BATDEP increasing 0.743 0.794 0.840
Zero volt operation threshold V
BATDEP decreasing 0.570 0.62 0.656
(1) Total battery current readback accuracy is based on the measured value of V
IBAT
, V
IBATm
, and the calculated value of V
IBAT
, V
IBATc
,
using the measured value of the transfer gain, GTR.
(2) See Table 1 to determine the logic operation of the bq24702 and the bq24703.
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