Datasheet

bq24630
www.ti.com SLUS894A –JANUARY 2010– REVISED OCTOBER 2011
ELECTRICAL CHARACTERISTICS (continued)
5 V ≤ V
VCC
≤ 28 V, 0°C < T
J
< 125°C, typical values are at T
A
= 25°C, with respect to GND unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CHARGE TERMINATION
V
ISET2
ISET2 voltage range 2 V
Termination current range R
SENSE
= 10 mΩ 2 A
Termination current set factor (amps of
K
TERM
1 A/V
termination current per volt on ISET2 pin)
V
ITERM
= 20 mV –4% 4%
Termination current accuracy V
ITERM
= 5 mV –25% 25%
V
ITERM
= <1.5 mV –45% 45%
Deglitch time for termination (both edge) 100 ms
t
QUAL
Termination qualification time V
BAT
> V
RECH
and I
CHARGE
< I
TERM
250 ms
I
QUAL
Termination qualification time Discharge current once termination is detected 2 mA
I
ISET2
Leakage current into ISET2 pin V
ISET2
= 2 V 100 nA
INPUT CURRENT REGULATION
V
ACSET
ACSET voltage range 0 2 V
V
IREG_DPM
ACP-ACN current sense voltage range V
IREG_DPM
= V
ACP
– V
ACN
0 100 mV
Input current set factor (amps of input
K
(ACSET)
R
SENSE
= 10 mΩ 5 A/V
current per volt on ACSET pin)
V
IREG_DPM
= 40 mV –3% 3%
Input current regulation accuracy V
IREG_DPM
= 20 mV –4% 4%
V
IREG_DPM
= 5 mV –25% 25%
I
ACSET
Leakage current into ACSET pin V
ACSET
= 2 V 100 nA
INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO)
V
UVLO
AC undervoltage rising threshold Measure on VCC 3.65 3.85 4 V
V
UVLO_HYS
AC undervoltage hysteresis, falling 350 mV
VCC LOWV COMPARATOR
Falling threshold, disable charge Measure on VCC 4.1 V
Rising threshold, resume charge 4.35 4.5 V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
V
SLEEP _FALL
SLEEP falling threshold V
VCC
– V
SRN
to enter SLEEP 40 100 150 mV
V
SLEEP_HYS
SLEEP hysteresis 500 mV
SLEEP rising delay VCC falling below SRN, delay to turn off ACFET 1 μs
SLEEP falling delay VCC rising above SRN, delay to turn on ACFET 30 μs
SLEEP rising shutdown deglitch VCC falling below SRN, delay to enter SLEEP mode 100 ms
SLEEP falling powerup deglitch VCC rising above SRN, delay to exit out of SLEEP mode 30 ms
ACN / SRN COMPARATOR
V
ACN-SRN_FALL
ACN to SRN falling threshold V
ACN
– V
SRN
to turn on BATFET 100 200 310 mV
V
ACN-SRN_HYS
ACN to SRN rising hysteresis 100 mV
ACN to SRN rising deglitch V
ACN
– V
SRN
> V
ACN-SRN_RISE
2 ms
ACN to SRN falling deglitch V
ACN
– V
SRN
< V
ACN-SRN_FALL
50 μs
BAT LOWV COMPARATOR
Precharge to fastcharge transition (LOWV
V
LOWV
Measured on VFB pin, rising 0.333 0.35 0.367 V
threshold)
V
LOWV_HYS
LOWV hysteresis 100 mV
LOWV rising deglitch VFB falling below VLOWV 25 ms
LOWV falling deglitch VFB rising above VLOWV 25 ms
RECHARGE COMPARATOR
Recharge threshold (with respect to
V
RECHG
Measured on VFB pin, rising 110 125 140 mV
VREG)
Recharge rising deglitch VFB decreasing below V
RECHG
10 ms
Recharge falling deglitch VFB increasing above V
RECHG
10 ms
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