Datasheet

top DS(on) G D bottom DS(on) G
FOM = R Q FOM = R Q´ ´
( )
2
top CHG DS(on) IN CHG on off S
1
P = D I R + V I t + t f
2
´ ´ ´ ´ ´ ´
SW SW
on off
on off
Q Q
t = , t =
I I
SW GD GS
1
Q = Q + Q
2
´
REG N plt plt
on off
on off
V V V
I = , I =
R R
-
2
bottom CHG DS(on)
P = (1 D) I R- ´ ´
ICLoss_driver IN g_total s
P V Q f= × ×
bq24630
www.ti.com SLUS894A –JANUARY 2010– REVISED OCTOBER 2011
Power MOSFET Selection
Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are
internally integrated into the IC with 6 V of gate drive voltage. 30-V or higher voltage rating MOSFETs are
preferred for a 20-V input voltage and 40-V MOSFETs are prefered for 20-V to 28-V input voltage.
Figure of merit (FOM) is usually used for selecting the proper MOSFET based on a tradeoff between the
conduction loss and switching loss. For a top-side MOSFET, FOM is defined as the product of a MOSFET
on-resistance, r
DS(on)
, and the gate-to-drain charge, Q
GD
. For a bottom-side MOSFET, FOM is defined as the
product of the MOSFET on-resistance, r
DS(on)
, and the total gate charge, Q
G
.
(17)
The lower the FOM value, the lower the total power loss. Usually, lower r
DS(on)
has higher cost with the same
package size.
The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle (D =
V
OUT
/V
IN
), charging current (I
CHARGE
), MOSFET on-resistance (r
DS(on)
), input voltage (V
IN
), switching frequency
(f
S
), turnon time (t
on
) and turnoff time (t
off
):
(18)
The first item represents the conduction loss. Usually, MOSFET r
DS(on)
increases by 50% with a 100ºC junction
temperature rise. The second term represents the switching loss. The MOSFET turnon and turnoff times are
given by:
(19)
where Q
sw
is the switching charge, I
on
is the turnon gate-driving current, and I
off
is the turnoff gate-driving current.
If the switching charge is not given in the MOSFET datasheet, it can be estimated by gate-to-drain charge (Q
GD
)
and gate-to-source charge (Q
GS
):
(20)
Total gate-driving current can be estimated by the REGN voltage (V
REGN
), MOSFET plateau voltage (V
plt
), total
turnon gate resistance (Ron), and turnoff gate resistance (R
off
) of the gate driver:
(21)
The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in
synchronous continuous conduction mode:
(22)
If the SRP-SRN voltage decreases below 5 mV (the charger is also forced into non-synchronous mode when the
average SRP-SRN voltage is lower than 1.25 mV), the low-side FET is turned off for the remainder of the
switching cycle to prevent negative inductor current.
As a result, all the freewheeling current goes through the body diode of the bottom-side MOSFET. The maximum
charging current in non-synchronous mode can be up to 0.9 A (0.5 A typ.) for a 10-mΩ charging-current sensing
resistor, considering IC tolerance. Choose the bottom-side MOSFET with either an internal Schottky or body
diode capable of carrying the maximum non-synchronous mode charging current.
MOSFET gate driver power loss contributes to the domainant losses on the controller IC when the buck
converter is switching. Choosing a MOSFET with a small Q
g_total
reduces the IC power loss to avoid thermal
shutdown.
(23)
where Q
g_total
is the total gate charge for both upper and lower MOSFET at 6-V V
REGN.
The VREF load current is another component of the VCC input current (Do not overload VREF.), where total IC
loss can be described by following equations:
Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 27
Product Folder Link(s): bq24630