Datasheet

bq24616
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SLUSA49B APRIL 2010 REVISED OCTOBER 2011
ELECTRICAL CHARACTERISTICS (continued)
5 V V
VCC
28 V, 0°C < T
J
< 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BATTERY DETECTION
t
WAKE
Wake time Maximum time charge is enabled 500 ms
I
WAKE
Wake current R
SENSE
= 10 m 50 125 200 mA
t
DISCHARGE
Discharge time Maximum time discharge current is applied 1 sec
I
DISCHARGE
Discharge current 8 mA
I
FAULT
Fault current after a time-out fault 2 mA
V
WAKE
Wake threshold (with respect to V
REG
) Voltage on VFB to detect battery absent during wake 50 mV
Voltage on VFB to detect battery absent during
V
DISCH
Discharge threshold 1.55 V
discharge
PWM HIGH-SIDE DRIVER (HIDRV)
High-side driver (HSD) turnon
R
DS_HI_ON
V
BTST
V
PH
= 5.5 V 3.3 6
resistance
R
DS_HI_OFF
High-side driver turnoff resistance V
BTST
V
PH
= 5.5 V 1 1.3
Bootstrap refresh comparator threshold
V
BTST_REFRESH
V
BTST
V
PH
when low-side refresh pulse is requested 4 4.2 V
voltage
PWM LOW-SIDE DRIVER (LODRV)
R
DS_LO_ON
Low side driver (LSD) turnon resistance 4.1 7
R
DS_LO_OFF
Low side driver turnoff resistance 1 1.4
PWM DRIVER TIMING
Dead time when switching between LSD and HSD, no
Driver dead time 30 ns
load at LSD and HSD
PWM OSCILLATOR
V
RAMP_HEIGHT
PWM ramp height As percentage of VCC 7 %
PWM switching frequency 510 600 690 kHz
INTERNAL SOFT START (8 steps to regulation current ICHG)
Soft start steps 8 step
Soft start step time 1.6 ms
CHARGER SECTION POWER-UP SEQUENCING
Charge-enable delay after power up Delay from CE = 1 until charger is allowed to turn on 1.5 s
LOGIC IO PIN CHARACTERISTICS (CE, STAT1, STAT2, PG)
V
IN_LO
CE input low-threshold voltage 0.8 V
V
IN_HI
CE input high-threshold voltage 2.1
V
BIAS_CE
CE input bias current V = 3.3 V (CE has internal 1-M pulldown resistor) 6 μA
STAT1, STAT2, PG output low
V
OUT_LO
Sink current = 5 mA 0.5 V
saturation voltage
I
OUT_HI
Leakage current V = 32 V 1.2 µA
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