Datasheet

bq24610
bq24617
www.ti.com SLUS892B –DECEMBER 2009–REVISED SEPTEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
5 V ≤ V
VCC
≤ 28 V, 0°C < T
J
< 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CHARGE TERMINATION
Termination current set factor (amps of
K
TERM
termination current per volt on ISET2 R
SENSE
= 10 mΩ 1 A/V
pin)
V
ITERM
= 20 mV –4% 4%
Termination current accuracy V
ITERM
= 5 mV –25% 25%
V
ITERM
= 1.5 mV –45% 45%
Deglitch time for termination (both edge) 100 ms
t
QUAL
Termination qualification time V
BAT
> V
RECH
and I
CHG
<I
TERM
250 ms
I
QUAL
Termination qualification current Discharge current once termination is detected 2 mA
INPUT CURRENT REGULATION
V
ACSET
ACSET voltage range 2 V
V
IREG_DPM
ACP-ACN current-sense voltage range V
IREG_DPM
= V
ACP
– V
ACN
100 mV
Input current set factor (amps of input
K
ACSET
R
SENSE
= 10 mΩ 5 A/V
current per volt on ACSET pin)
V
IREG_DPM
= 40 mV –3% 3%
Input current regulation accuracy
I
ACSET
V
IREG_DPM
= 20 mV –4% 4%
leakage current in to ACSET pin
V
IREG_DPM
= 5 mV –25% 25%
I
ISET1
Leakage current in to ACSET pin V
ACSET
= 2 V 100 nA
INPUT UNDERVOLTAGE LOCK-OUT COMPARATOR (UVLO)
V
UVLO
AC undervoltage rising threshold Measure on VCC 3.65 3.85 4 V
V
UVLO_HYS
AC undervoltage hysteresis, falling 350 mV
VCC LOWV COMPARATOR
Falling threshold, disable charge Measure on VCC 4.1 V
Rising threshold, resume charge 4.35 4.5 V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
V
SLEEP _FALL
SLEEP falling threshold V
VCC
– V
SRN
to enter SLEEP 40 100 150 mV
V
SLEEP_HYS
SLEEP hysteresis 500 mV
SLEEP rising delay VCC falling below SRN, delay to turn off ACFET 1 μs
SLEEP falling delay VCC rising above SRN, delay to turn on ACFET 30 μs
SLEEP rising shutdown deglitch VCC falling below SRN, delay to enter SLEEP mode 100 ms
SLEEP falling powerup deglitch VCC rising above SRN, delay to exit SLEEP mode 30 ms
ACN / SRN COMPARATOR
V
ACN-SRN_FALL
ACN to SRN falling threshold V
ACN
– V
SRN
to turn on BATFET 100 200 310 mV
V
ACN-SRN_HYS
ACN to SRN rising hysteresis 100 mV
ACN to SRN rising deglitch V
ACN
– V
SRN
> V
ACN-SRN_RISE
2 ms
ACN to SRN falling deglitch V
ACN
– V
SRN
< V
ACN-SRN_FALL
50 μs
BAT LOWV COMPARATOR
Precharge to fast-charge transition
V
LOWV
Measured on VFB pin, rising 1.534 1.55 1.566 V
(LOWV threshold)
V
LOWV_HYS
LOWV hysteresis 100 mV
LOWV rising deglitch VFB falling below V
LOWV
25 ms
LOWV falling deglitch VFB rising above V
LOWV
+ V
LOWV_HYS
25 ms
RECHARGE COMPARATOR
Recharge threshold (with-respect-to
V
RECHG
Measured on VFB pin, falling 35 50 65 mV
V
REG
)
Recharge rising deglitch VFB decreasing below V
RECHG
10 ms
Recharge falling deglitch VFB decreasing above V
RECHG
10 ms
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