Datasheet

bq24600
www.ti.com SLUS891A –FEBRUARY 2010– REVISED OCTOBER 2011
ELECTRICAL CHARACTERISTICS (continued)
5 V ≤ V
VCC
≤ 28 V, 0°C < T
J
< 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REGN REGULATOR
V
REGN_REG
REGN regulator voltage V
VCC
> 10 V, CE = HIGH (0 - 40 mA load) 5.7 6.0 6.3 V
I
REGN_LIM
REGN current limit V
REGN
= 0 V, V
VCC
> V
UVLO
40 mA
SAFETY TIMER
t
PRECHG
Precharge safety timer range
(1)
Precharge time before fault occurs 1440 1800 2160 s
t
CHARGE
Internal five hour safety timer
(1)
4.25 5 5.75 hr
BATTERY DETECTION
t
WAKE
Wake timer Max time charge is enabled 500 ms
I
WAKE
Wake current R
SENSE
= 10 mΩ 50 125 200 mA
t
DISCHARGE
Discharge timer Max time discharge current is applied 1 s
I
DISCHARGE
Discharge current 8 mA
I
FAULT
Fault current after a timeout fault 2 mA
V
WAKE
Wake threshold (relative to V
REG
) Voltage on VFB to detect battery absent during wake 50 mV
V
DISCH
Discharge threshold Voltage on VFB to detect battery absent during discharge 1.55 V
PWM HIGH SIDE DRIVER (HIDRV)
High-side driver (HSD) turnon
R
DS_HI_ON
V
BTST
– V
PH
= 5.5 V 3.3 6 Ω
resistance
R
DS_HI_OFF
High-side driver turnoff resistance V
BTST
– V
PH
= 5.5 V 1 1.3 Ω
Bootstrap refresh comparator threshold
V
BTST_REFRESH
V
BTST
– V
PH
when low side refresh pulse is requested 4 4.2 V
voltage
PWM LOW SIDE DRIVER (LODRV)
R
DS_LO_ON
Low-side driver (LSD) turnon resistance 4.1 7 Ω
R
DS_LO_OFF
Low-side driver turnoff resistance 1 1.4 Ω
PWM DRIVERS TIMING
Dead time when switching between LSD and HSD, no
Driver dead time 30 ns
load at LSD and HSD
PWM OSCILLATOR
V
RAMP_HEIGHT
PWM ramp height As percentage of VCC 7%
PWM switching frequency
(1)
1020 1200 1380 kHz
INTERNAL SOFT START (8 steps to regulation current I
CHARGE
)
Soft-start steps 8 step
Soft-start step time 1.6 ms
CHARGER SECTION POWER-UP SEQUENCING
Delay from when CE = 1 to when the charger is allowed to
Charge-enable delay after power up 1.5 s
turn on
LOGIC IO PIN CHARACTERISTICS (CE, STAT, PG)
V
IN_LO
CE input low threshold voltage 0.8 V
V
IN_HI
CE input high threshold voltage 2.1
V
BIAS_CE
CE input bias current V = 3.3 V (CE has internal 1MΩ pulldown resistor) 6 μA
V
OUT_LO
STAT, PG output low saturation voltage Sink current = 5 mA 0.5 V
I
OUT_HI
Leakage current V = 32 V 1.2 µA
(1) Verified by design.
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