Datasheet

bq24600
www.ti.com SLUS891A –FEBRUARY 2010– REVISED OCTOBER 2011
ELECTRICAL CHARACTERISTICS (continued)
5 V ≤ V
VCC
≤ 28 V, 0°C < T
J
< 125°C, typical values are at T
A
= 25°C, with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT REGULATION – FAST CHARGE
V
ISET
ISET voltage range 2 V
V
IREG_CHG
SRP-SRN current sense voltage range V
IREG_CHG
= V
SRP
– V
SRN
100 mV
Charge current set factor (amps of
K
ISET
R
SENSE
= 10 mΩ 5 A/V
charge current per volt on ISET pin)
V
IREG_CHG
= 40 mV –3% 3%
V
IREG_CHG
= 20 mV –4% 4%
Charge current regulation accuracy
V
IREG_CHG
= 5 mV –25% 25%
V
IREG_CHG
= 1.5 mV (V
SRN
> 3.1 V) –40% 40%
I
ISET
Leakage current into ISET pin V
ISET
= 2 V 100 nA
CURRENT REGULATION – PRECHARGE
I
CHARGE
Precharge current range R
SENSE
= 10 mΩ A
/10
Precharge current set factor (amps of
K
PRECH
R
SENSE
= 10 mΩ 0.5 A/V
precharge current per volt on ISET pin)
V
IREG_PRECH
= 10 mV –10% 10%
Precharge current regulation accuracy V
IREG_PRECH
= 5 mV –25% 25%
V
IREG_PRECH
= 1.5 mV (V
SRN
< 3.1 V) –55% 55%
CHARGE TERMINATION
I
CHARGE
Termination current range R
SENSE
= 10 mΩ A
/10
Termination current set factor (amps of
K
TERM
R
SENSE
= 10 mΩ 0.5 A/V
termination current per volt on ISET pin)
V
ITERM
= 10 mV –10% 10%
Termination current accuracy V
ITERM
= 5 mV –25% 25%
V
ITERM
= 1.5 mV –45% 45%
Deglitch time for termination (both ms
100
edges)
t
QUAL
Termination qualification time V
BAT
> V
RECH
and I
CHARGE
< I
TERM
250 ms
I
QUAL
Termination qualification current Discharge current once termination is detected 2 mA
INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO)
V
UVLO
AC undervoltage rising threshold Measure on VCC 3.65 3.85 4 V
V
UVLO_HYS
AC undervoltage hysteresis, falling 350 mV
VCC LOWV COMPARATOR
Falling threshold, disable charge Measure on VCC 4.1 V
Rising threshold, resume charge 4.35 4.5 V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
V
SLEEP _FALL
SLEEP falling threshold V
VCC
– V
SRN
to enter SLEEP 40 100 150 mV
V
SLEEP_HYS
SLEEP hysteresis 500 mV
SLEEP rising delay VCC falling below SRN, delay to pull up PG 1 µs
SLEEP falling delay VCC rising above SRN, delay to pull down PG 30 ms
SLEEP rising shutdown deglitch VCC falling below SRN, delay to enter SLEEP mode 100 ms
VCC rising above SRN, delay to come out of SLEEP
SLEEP falling powerup deglitch 30 ms
mode
BAT LOWV COMPARATOR
Precharge to fast-charge transition
V
LOWV
Measured on VFB pin 1.534 1.55 1.566 V
(LOWV threshold)
V
LOWV_HYS
LOWV hysteresis 100 mV
LOWV rising deglitch VFB falling below Vlowv 25 ms
LOWV falling deglitch VFB rising above Vlowv + V
LOWV_HYS
25 ms
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