Datasheet

bq24160, bq24160A
bq24161, bq24161B
bq24163, bq24168
SLUSAO0E –NOVEMBER 2011–REVISED NOVEMBER 2013 www.ti.com
ELECTRICAL CHARACTERISTICS (Continued)
Circuit of Figure 23, V
SUPPLY
= V
USB
or V
IN
(whichever is supplying the IC), V
UVLO
< V
SUPPLY
< V
OVP
and V
SUPPLY
> V
BAT
+V
SLP
,
T
J
= -40°C – 125°C and T
J
= 25ºC for typical values (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENT LIMITING
I
USBLIM
= USB100 90 95 100
I
USBLIM
= USB500 450 475 500
IUSBLIM = USB150 135 142.5 150
USB charge mode, V
USB
= 5V,
I
IN_USB
Input current limit threshold (USB input) mA
DC Current pulled from SW
I
USBLIM
= USB900 800 850 900
I
USBLIM
= USB800 700 750 800
I
USBLIM
= 1.5A 1250 1400 1500
IN charge mode, V
IN
= 5V, I
INLIM
= 1.5A 1.35 1.5 1.65
I
IN_IN
Input current limit threshold (IN input) A
DC Current pulled from SW
I
INLIM
= 2.5A 2.3 2.5 2.8
V
IN_DPM
Input based DPM threshold range 4.2 4.76 V
Charge mode, programmable via I
2
C, both inputs
V
IN_DPM
threshold accuracy –2 +2%
VDRV BIAS REGULATOR
V
DRV
Internal bias regulator voltage V
SUPPLY
> 5.45V 5 5.2 5.45 V
I
DRV
DRV output current 10 mA
V
DO_DRV
DRV Dropout voltage (V
SUPPLY
– V
DRV
) I
SUPPLY
= 1A, V
SUPPLY
= 5V, I
DRV
= 10mA 450 mV
STATUS OUTPUT (STAT, INT)
V
OL
Low-level output saturation voltage I
O
= 10mA, sink current 0.4 V
I
IH
High-level leakage current V
STAT
= V
INT
= 5V 1 µA
PROTECTION
V
UVLO
IC active threshold voltage V
IN
rising 3.6 3.8 4 V
V
UVLO_HYS
IC active hysteresis V
IN
falling from above V
UVLO
120 150 mV
V
SLP
Sleep-mode entry threshold, V
SUPPLY
-V
BAT
2.0V ≤V
BAT
≤V
BATREG
, V
IN
falling 0 40 100 mV
V
SLP_EXIT
Sleep-mode exit hysteresis 2.0V ≤V
BAT
≤V
BATREG
40 100 175 mV
Deglitch time for supply rising above V
SLP
+V
SLP_EXIT
Rising voltage, 2mV over drive, t
RISE
= 100ns 30 ms
V
IN_DPM
V
BAD_SOURCE
Bad source detection threshold V
– 80 mV
Deglitch on bad source detection 32 ms
USB, V
USB
Rising 6.3 6.5 6.7
V
OVP
Input supply OVP threshold voltage IN, V
IN
Rising (bq24160/1/3) 10.3 10.5 10.7 V
IN, V
IN
Rising (bq24168) 6.3 6.5 6.7
V
OVP(HYS)
V
OVP
hysteresis Supply falling from V
OVP
100 mV
1.025 × 1.05 × 1.075 ×
V
BOVP
Battery OVP threshold voltage V
BAT
threshold over V
OREG
to turn off charger during charge V
V
BATREG
V
BATREG
V
BATREG
% of
V
BOVP
hysteresis Lower limit for V
BAT
falling from above V
BOVP
1
V
BATREG
t
DGL(BOVP)
Battery OVP deglitch BOVP fault shown in register once t
DGL(BOVP)
expires. 1 ms
Buck converter shut down immediately when V
BAT
> V
BATOVP
V
BATUVLO
Battery undervoltage lockout threshold V
BAT
rising, 100mV hysteresis 2.5 V
I
LIMIT
Cycle-by-cycle current limit V
SYS
shorted 4.1 4.9 5.6 A
T
SHTDWN
Thermal trip 165 °C
Thermal hysteresis 10
T
REG
Thermal regulation threshold Charge current begins to cut off 120 °C
Safety timer accuracy (bq24160/1/3 Only) –20% 20%
PWM
I
IN_LIMIT
= 500mA, Measured from USB to PMIDU 95 175
Internal top reverse blocking MOSFET on-resistance mΩ
I
IN_LIMIT
= 500mA, Measured from IN to PMIDI 45 80
Measured from PMIDU to SW 100 175
Internal top N-channel Switching MOSFET on-
mΩ
resistance
Measured from PMIDI to SW 65 110
Internal bottom N-channel MOSFET on-resistance Measured from SW to PGND 65 115 mΩ
f
OSC
Oscillator frequency 1.35 1.50 1.65 MHz
D
MAX
Maximum duty cycle 95%
D
MIN
Minimum duty cycle 0%
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Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168