Datasheet

bq24160, bq24160A
bq24161, bq24161B
bq24163, bq24168
SLUSAO0E –NOVEMBER 2011–REVISED NOVEMBER 2013 www.ti.com
Battery Termination/Fast Charge Current Register (READ/WRITE)
Memory location: 05, Reset state: 0011 0010
BIT NAME Read/Write FUNCTION
B7 (MSB) I
CHRG4
Read/Write Charge current: 1200mA – (default 0)
B6 I
CHRG3
Read/Write Charge current: 600mA – (default 0)
B5 I
CHRG2
Read/Write Charge current: 300mA – (default 1)
B4 I
CHRG1
Read/Write Charge current: 150mA – (default 1)
B3 I
CHRG0
Read/Write Charge current: 75 mA (default 0)
B2 I
TERM2
Read/Write Termination current sense voltage: 200mA (default 0)
B1 I
TERM1
Read/Write Termination current sense voltage: 100mA (default 1)
B0 (LSB) I
TERM0
Read/Write Termination current sense voltage: 50mA (default 0)
• Charge current sense offset is 550mA and default charge current is 1000mA.
• Termination threshold offset is 50mA and default termination current is 150mA
V
IN-DPM
Voltage/ DPPM Status Register
Memory location: 06, Reset state: xx00 0000
BIT NAME Read/Write FUNCTION
B7(MSB) MINSYS_STATUS Read Only 1 – Minimum System Voltage mode is active (V
BAT
<V
MINSYS
)
0 – Minimum System Voltage mode is not active
B6 DPM_STATUS Read Only 1 – V
IN
-DPM mode is active
0 – V
IN
-DPM mode is not active
B5 V
INDPM2(USB)
Read/Write USB input V
IN-DPM
voltage: 320mV (default 0)
B4 V
INDPM1(USB)
Read/Write USB input V
IN-DPM
voltage: 160mV (default 0)
B3 V
INDPM0(USB)
Read/Write USB input V
IN-DPM
voltage: 80mV (default 0)
B2 V
INDPM2(IN)
Read/Write IN input V
IN-DPM
voltage: 320mV (default 0)
B1 V
INDPM1(IN)
Read/Write IN input V
IN-DPM
voltage: 160mV (default 0)
B0(LSB) V
INDPM0(IN)
Read/Write IN input V
IN-DPM
voltage: 80mV (default 0)
• V
IN-DPM
voltage offset is 4.20V and default V
IN-DPM
threshold is 4.20V.
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