Datasheet

ILIM
ILIM
K
I =
R
INLIM
bq24165
bq24166
bq24167
www.ti.com SLUSAP4B –DECEMBER 2011–REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, V
SUPPLY
= V
USB
or V
IN
(whichever is supplying the IC), V
UVLO
< V
SUPPLY
< V
OVP
and V
SUPPLY
> V
BAT
+V
SLP
,
mm T
J
= 0°C–125°C and T
J
= 25ºC for typical values (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Maximum input current limit programmable
I
INLIM
1000 2500 mA
range for IN input
K
ILIM
Maximum input current factor for IN input 238 251 264 AΩ
VIN_DPM threshold programmable range for
V
IN_DPM_IN
4.2 10 V
IN Input
VDPM threshold 1.18 1.2 1.22 V
USB100, USB150 4.175 4.28 4.36
V
IN_DPM_USB
VIN_DPM threshold for USB Input V
USB500, USB800, USB900, 1.5A current limit selected 4.35 4.44 4.52
V
DRV
Internal bias regulator voltage V
SUPPLY
> 5.45V 5 5.2 5.45 V
I
DRV
DRV Output current 10 mA
DRV Dropout voltage
V
DO_DRV
I
SUPPLY
= 1 A, V
SUPPLY
= 5 V, I
DRV
= 10 mA 450 mV
(V
SUPPLY
– V
DRV
)
V
UVLO
Under-voltage lockout threshold voltage V
IN
or V
USB
rising, 150mV Hysteresis 3.6 3.8 4.0 V
Sleep-mode entry threshold, VSUPPLY-
V
SLP
2.0 V ≤ V
BAT
≤ V
OREG
, V
IN
falling 0 40 100 mV
VBAT
V
SLP_EXIT
Sleep-mode exit hysteresis 2.0 V ≤ V
BAT
≤ V
OREG
40 100 175 mV
Deglitch time for supply rising above
Rising voltage, 2-mV over drive, t
RISE
= 100 ns 30 ms
V
SLP
+V
SLP_EXIT
USB, V
USB
Rising 6.3 6.5 6.7
V
OVP
Input supply OVP threshold voltage V
IN, V
IN
Rising 10.3 10.5 10.7
V
OVP(HYS)
V
OVP
hysteresis Supply falling from V
OVP
100 mV
1.025 × 1.05 × 1.075 ×
V
BOVP
Battery OVP threshold voltage V
BAT
threshold over V
OREG
to turn off charger during charge V
V
BATREG
V
BATREG
V
BATREG
V
BATUVLO
Battery UVLO threshold voltage 2.5 V
I
LIMIT
Cycle by Cycle current limit 4.1 4.9 5.6 A
T
SHUTDWN
Thermal shutdown 10C Hysteresis 165 C
T
REG
Thermal regulation threshold 120 C
Safety Timer 324 360 396 min
IUSB_, CE_, PG, CHG
V
IH
Input high threshold 1.3 V
V
IL
Input low threshold 0.4 V
I
IH
High-level leakage current V
CHG
= V
PG
= 5V 1 µA
V
OL
Low-level output saturation voltage I
O
= 10 mA, sink current 0.4 V
PWM CONVERTER
I
IN_LIMIT
= 500 mA, Measured from V
USB
to PMIDU 95 175
Internal top reverse blocking MOSFET on-
mΩ
resistance
I
IN_LIMIT
= 500 mA, Measured from V
IN
to PMIDI 45 80
Measured from PMIDU to SW 100 175
Internal top N-channel Switching MOSFET
mΩ
on-resistance
Measured from PMIDI to SW 65 110
Internal bottom N-channel MOSFET on-
Measured from SW to PGND 65 115
resistance
f
OSC
Oscillator frequency 1.35 1.50 1.65 MHz
D
MAX
Maximum duty cycle 95%
D
MIN
Minimum duty cycle 0
BATTERY-PACK NTC MONITOR (bq24166, bq24167)
V
HOT
High temperature threshold V
TS
falling 29.7 30 30.5
%V
DRV
V
HYS(HOT)
Hysteresis on high threshold V
TS
rising 1
V
WARM
Warm temperature threshold V
TS
falling, bq24167 only 37.9 38.3 39.6
%V
DRV
V
HYS(WARM)
Hysteresis on high threshold V
TS
rising, bq24167 only 1
V
COOL
Cool temperature threshold V
TS
rising, bq24167 only 56.0 56.5 56.9
%V
DRV
V
HYS(COOL)
Hysteresis on low threshold V
TS
falling, bq24167 only 1
V
COLD
Low temperature threshold V
TS
rising 59.5 60 60.4
%V
DRV
V
HYS(COLD)
Hysteresis on low threshold V
TS
falling 1
T
SOFF
TS Disable threshold V
TS
rising, 2%V
DRV
Hysteresis 70 73 %V
DRV
t
DGL(TS)
Deglitch time on TS change 50 ms
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