Datasheet

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DATA FLASH MEMORY CHARACTERISTICS
REGISTER BACKUP
bq20z80-V102
SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007
V
DD
= 3 V to 3.6 V, T
A
= –40 ° C to 85 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
DR
Data retention See
(1)
10 Years
Flash programming write-cycles See
(1)
20,000 Cycles
t
(WORDPROG)
Word programming time See
(1)
2 ms
I
(DDPROG)
Flash-write supply current See
(1)
8 15 mA
(1) Assured by design. Not production tested
V
DD
= 3 V to 3.6 V, T
A
= –40 ° C to 85 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
(RBI)
RBI data-retention input current V
(RBI)
> 3 V, V
DD
< V
IT
10 100 nA
V
(RBI)
RBI data-retention voltage
(1)
1.3 V
(1) Specified by design. Not production tested.
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